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2N3856

Onsemi

2N3856 by Onsemi

The Onsemi 2N3856 is a NPN BJT with max. power dissipation of 0.62W, hFE of 100, and fT of 140MHz. Ideal for low-power applications requiring a single configuration transistor in through-hole package style. Operating at up to 150 °C, it offers a max. collector-emitter voltage of 18V and collector current of 0.1A.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Digiode

USA . 1,957 parts In-Stock

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Vyrian

USA . 1,643 parts In-Stock

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Electronic Expediters

USA . 500 parts In-Stock

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Electronics Depot

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Mil-Aero Solutions, Inc.

USA . 1 parts In-Stock

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Beltway Electronics Company

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TANS Electronics

Latvia . 7,644 parts In-Stock

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Problanco Electronics

Mexico . 5,257 parts In-Stock

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Kulean Microsystems

USA . 3,842 parts In-Stock

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Corphita

USA . 1,353 parts In-Stock

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Native Components

USA . 557 parts In-Stock

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SupplyDigital Components

Austria . 553 parts In-Stock

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Northwest PG Solutions

USA . 246 parts In-Stock

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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Corohmni

South Africa . 152 parts In-Stock

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Overview

Elevate your electronic designs with the 2N3856 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor offers exceptional performance and reliability. Whether you're working on amplifiers, oscillators, or switching circuits, the 2N3856 delivers unmatched value, benefits, and advantages to enhance your projects. Trust in Onsemi's reputation for excellence and choose the 2N3856 for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for different electronic designs.

Configuration: SINGLE

Simplified setup and design, ideal for straightforward applications.

Maximum Power Dissipation: 0.62 W

Efficient power handling capability for its size, ensuring stable performance under load.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without sacrificing performance, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 18 V

Suitable for low voltage circuits and applications, ensuring safe operation within specified limits.

Nominal Transition Frequency: 140 MHz

High frequency response allows for fast switching speeds, advantageous for high-speed applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3856 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3856 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-770-1086, 5961007701086

NIIN

007701086

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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