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1PMT5931BT1G

Onsemi

1PMT5931BT1G by Onsemi

1PMT5931BT1G by Onsemi is a Zener diode with a nominal reference voltage of 18V, max power dissipation of 0.5W, and max operating temperature of 150 °C. It is used in applications requiring precise voltage regulation, such as power supplies and voltage references.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,968 parts In-Stock

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Digiode

USA . 452 parts In-Stock

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Native Components

USA . 343 parts In-Stock

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$5.478

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AZTECH Wire

Italy . 35 parts In-Stock

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$12.710

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Kepictronics

USA . 66,000 parts In-Stock

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SupplyDigital Components

Austria . 4,707 parts In-Stock

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Kulean Microsystems

USA . 3,264 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,963 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 2,002 parts In-Stock

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Northwest PG Solutions

USA . 1,895 parts In-Stock

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UHIMA Technologies

Türkiye . 743 parts In-Stock

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Corohmni

South Africa . 73 parts In-Stock

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Overview

Elevate your electronics with the 1PMT5931BT1G Zener Diode by Onsemi. Crafted with precision and quality, this diode offers reliable performance and stability for a wide range of applications. From voltage regulation to signal conditioning, this diode ensures optimal functionality every time. With a small outline package and high maximum voltage tolerance, this diode is a versatile solution for your electronic needs. Trust in Onsemi to deliver cutting-edge technology that meets your demands for efficiency and effectiveness. Upgrade your projects today with the 1PMT5931BT1G Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 20.8 mA

Suitable for a variety of applications, offering flexibility and versatility.

Surface Mount: YES

Allows for easy and efficient assembly onto PCBs, saving time and effort.

Maximum Voltage Tolerance: 5 %

Ensures precise and stable voltage regulation, making it reliable for different circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for use in various environments.

Maximum Power Dissipation: 0.5 W

Can handle a decent amount of power, making it suitable for different applications.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation, providing consistent performance.

Nominal Reference Voltage: 18 V

Offers a stable reference voltage, ensuring accurate regulation in circuits.

Technical Specifications

Zener Diodes 1PMT5931BT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

12 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20.8 mA

Trade Compliance

1PMT5931BT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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