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1PMT5923BT3G

Onsemi

1PMT5923BT3G by Onsemi

1PMT5923BT3G by Onsemi is a Zener diode with a nominal reference voltage of 8.2V and max power dissipation of 0.5W. It operates in temperatures ranging from -55 to 150 °C, making it suitable for various applications requiring precise voltage regulation in compact electronic circuits. With a small outline package style and gull wing terminal form, this diode is ideal for surface mount designs where space is limited.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,088 parts In-Stock

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Vyrian

USA . 120 parts In-Stock

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Native Components

USA . 694 parts In-Stock

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$0.176

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$0.169

694

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$0.169

Northwest PG Solutions

USA . 869 parts In-Stock

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$0.194

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$0.171

869

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Kulean Microsystems

USA . 7,587 parts In-Stock

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Problanco Electronics

Mexico . 6,790 parts In-Stock

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TANS Electronics

Latvia . 5,239 parts In-Stock

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SupplyDigital Components

Austria . 4,042 parts In-Stock

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Corphita

USA . 1,152 parts In-Stock

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UHIMA Technologies

Türkiye . 791 parts In-Stock

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Corohmni

South Africa . 60 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the 1PMT5923BT3G Zener Diode. This small outline diode offers a wide range of applications, from voltage regulation to surge protection, ensuring optimal performance in various electronic circuits. With a maximum power dissipation of 0.5W and a nominal reference voltage of 8.2V, this Zener diode provides precision and stability. Trust Onsemi for all your semiconductor needs and discover the value and benefits that the 1PMT5923BT3G can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides good insulation and protection for the diode, making it durable and reliable for long-term use.

Working Test Current: 45.7 mA

The high working test current ensures that the diode can handle a significant amount of current without getting damaged, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and simplifying the manufacturing process.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the diode to function effectively even in harsh environmental conditions, ensuring stability and reliability.

Nominal Reference Voltage: 8.2 V

The precise nominal reference voltage of 8.2 V ensures consistent performance and accuracy in voltage regulation applications.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this diode can handle moderate power levels without overheating, making it suitable for a wide range of applications.

Technical Specifications

Zener Diodes 1PMT5923BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

3.5 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

8.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.07 %

Working Test Current:

45.7 mA

Trade Compliance

1PMT5923BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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