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1PMT5920BT3G

Onsemi

1PMT5920BT3G by Onsemi

1PMT5920BT3G by Onsemi is a Zener diode with a nominal reference voltage of 6.2V and max power dissipation of 0.5W. It operates at a max temperature of 150°C, has a working test current of 60.5mA, and features a small outline package style for various applications in electronics circuits requiring voltage regulation.

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Vyrian

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Digiode

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Semicontronic

India . 1,398 parts In-Stock

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Ampacity Inc.

Singapore . 519 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,570 parts In-Stock

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AZTECH Wire

Italy . 264 parts In-Stock

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TANS Electronics

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Argo Parts USA

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Problanco Electronics

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Overview

Unleash the power of precision with the 1PMT5920BT3G Zener Diode by Onsemi. Crafted with the utmost quality and expertise, this diode offers unmatched reliability and performance. From voltage regulation to surge protection, this small outline package is perfect for a wide range of applications. With a maximum operating temperature of 150°C and a nominal reference voltage of 6.2V, this Zener diode ensures stable and efficient operation. Trust Onsemi for superior quality and trust the 1PMT5920BT3G for exceptional value and benefits in all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a long lifespan.

Working Test Current: 60.5 mA

Allows for reliable performance within specified current limits.

Surface Mount: YES

Easy to install and saves space on the circuit board.

Maximum Voltage Tolerance: 5%

Ensures accurate voltage regulation within a small margin of error.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance.

Maximum Dynamic Impedance: 2 ohm

Provides stable impedance characteristics for efficient voltage regulation.

Terminal Finish: TIN

Ensures good electrical conductivity and solderability.

Maximum Power Dissipation: 0.5 W

Can handle power dissipation effectively without overheating.

Nominal Reference Voltage: 6.2 V

Provides stable voltage reference for precision applications.

Technical Specifications

Zener Diodes 1PMT5920BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

6.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

60.5 mA

Trade Compliance

1PMT5920BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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