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1PMT5922BT3G

Onsemi

1PMT5922BT3G by Onsemi

1PMT5922BT3G by Onsemi is a Zener diode with a nominal reference voltage of 7.5V and max power dissipation of 0.5W. It operates at a max temperature of 150 °C, has a working test current of 50mA, and features a small outline package style for surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,277 parts In-Stock

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Vyrian

USA . 395 parts In-Stock

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395

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Native Components

USA . 45 parts In-Stock

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$0.347

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$0.333

45

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$0.333

Northwest PG Solutions

USA . 1,290 parts In-Stock

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$0.382

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$0.337

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$0.382

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$0.337

TANS Electronics

Latvia . 6,319 parts In-Stock

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Kulean Microsystems

USA . 5,929 parts In-Stock

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SupplyDigital Components

Austria . 4,013 parts In-Stock

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Corphita

USA . 1,746 parts In-Stock

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Problanco Electronics

Mexico . 1,512 parts In-Stock

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UHIMA Technologies

Türkiye . 401 parts In-Stock

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Corohmni

South Africa . 391 parts In-Stock

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Overview

Unleash the power of reliable performance with the Onsemi 1PMT5922BT3G Zener Diode. Manufactured by Onsemi, a trusted name in the industry, this diode offers unparalleled quality and precision. Ideal for a wide range of applications, this diode provides stable voltage regulation and protection for your circuits. With a maximum operating temperature of 150 °C and a nominal reference voltage of 7.5V, this diode ensures optimal performance under all conditions. Upgrade your electronics with the Onsemi 1PMT5922BT3G and experience unmatched reliability and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a long lifespan.

Working Test Current: 50 mA

Can handle a relatively high current, making it suitable for various applications.

Surface Mount: YES

Easy to install on circuit boards, saving time and effort.

Maximum Voltage Tolerance: 5 %

Ensures stable and accurate voltage regulation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for harsh environments.

Maximum Dynamic Impedance: 3 ohm

Provides efficient and reliable voltage regulation.

Terminal Finish: TIN

Helps with soldering and conductivity.

Maximum Power Dissipation: 0.5 W

Can handle moderate power levels without overheating.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation applications.

Nominal Reference Voltage: 7.5 V

Provides a stable reference voltage for precision applications.

Technical Specifications

Zener Diodes 1PMT5922BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

3 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

7.5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

50 mA

Trade Compliance

1PMT5922BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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