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1PMT5927BT1G

Onsemi

1PMT5927BT1G by Onsemi

1PMT5927BT1G by Onsemi is a Zener diode with a nominal reference voltage of 12V, max power dissipation of 0.5W, and working test current of 31.2mA. It is used in applications requiring precise voltage regulation such as power supplies and voltage references due to its small outline package style and unidirectional polarity.

Median Price

$0.262

Lifecycle Status

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17

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1k+

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Arrow

USA . 2,950 parts In-Stock

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$0.255

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$0.214

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$0.186

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$0.168

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$0.255

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Rochester

USA . 1,228 parts In-Stock

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$0.270

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$0.260

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Mouser Electronics

USA . 3,292 parts In-Stock

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$0.670

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$0.358

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$0.254

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$0.222

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DigiKey

USA . 16,842 parts In-Stock

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$0.700

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$0.369

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$0.262

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$0.210

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$0.210

Verical

USA . 3,000 parts In-Stock

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Chip1Stop

Japan . 3,000 parts In-Stock

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Digiode

USA . 1,570 parts In-Stock

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$0.256

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Nova Conductors

Japan . 900 parts In-Stock

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Bristol Electronics

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NAC Semi

USA . 6,000 parts In-Stock

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Vyrian

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Lakeland Logistics Inc

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Sunrise Surplus Inc.

USA . 2,683 parts In-Stock

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PAR Electronics

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VNN

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Aztec Data Supply Inc.

USA . 751 parts In-Stock

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$0.060

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.076

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$0.069

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$0.062

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$0.076

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Ampacity Inc.

Singapore . 5,791 parts In-Stock

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$0.137

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Semicontronic

India . 5,604 parts In-Stock

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$0.148

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Corohmni

South Africa . 459 parts In-Stock

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Corphita

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Continental Prestige Electronics

USA . 5,910 parts In-Stock

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Argo Parts USA

USA . 2,888 parts In-Stock

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Kepictronics

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Perfect Parts

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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Netroflash

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Problanco Electronics

Mexico . 419 parts In-Stock

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UHIMA Technologies

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Overview

Unleash the power of precision with the 1PMT5927BT1G Zener Diode by Onsemi. Crafted with the highest quality materials, this diode guarantees reliability and performance like no other. Perfect for a wide range of applications, this diode offers unparalleled value by providing stable voltage regulation and protection against voltage spikes. Say goodbye to fluctuations and hello to seamless operations with the 1PMT5927BT1G - the ultimate choice for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring reliability in various operating conditions.

Working Test Current: 31.2 mA

Allows for consistent performance under specified conditions, providing reliability in circuit applications.

Maximum Voltage Tolerance: 5 %

Ensures precise voltage regulation, making it suitable for applications requiring stable voltage output.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, expanding its usability in various applications.

Maximum Power Dissipation: 0.5 W

Can handle moderate power dissipation, making it suitable for applications where power handling is crucial.

Nominal Reference Voltage: 12 V

Provides a stable reference voltage, making it ideal for voltage regulation and protection in circuits.

Technical Specifications

Zener Diodes 1PMT5927BT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

6.5 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

31.2 mA

Trade Compliance

1PMT5927BT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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