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1SMA5927BT3G

Onsemi

1SMA5927BT3G by Onsemi

1SMA5927BT3G by Onsemi is a Zener diode with a nominal reference voltage of 12V and max power dissipation of 0.5W. It operates in temperatures ranging from -65 to 150 °C and has a max dynamic impedance of 6.5 ohm. Ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package style and unidirectional polarity.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

46

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 40 parts In-Stock

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Mouser Electronics

USA . 62,656 parts In-Stock

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Future Electronics

Canada . 280,000 parts In-Stock

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Arrow

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Verical

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Chip1Stop

Japan . 55,704 parts In-Stock

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Master Electronics

USA . 40,000 parts In-Stock

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Element14

Singapore . 24,796 parts In-Stock

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Rochester

USA . 13,929 parts In-Stock

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DigiKey

USA . 9,517 parts In-Stock

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Newark

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Digiode

USA . 2,250 parts In-Stock

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Poland . 2,567 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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TME

Poland . 591 parts In-Stock

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IBS Electronics

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Semicontronic

India . 42,713 parts In-Stock

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Ampacity Inc.

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Corohmni

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Advanced Electronics

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Argo Parts USA

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Modulus Dynamics

Lithuania . 22,874 parts In-Stock

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Netroflash

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Perfect Parts

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Authorized Procurement Solutions

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Epart123

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Metaverse IC Inc.

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iBuyXS LLC

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Continental Prestige Electronics

USA . 28,634 parts In-Stock

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iodParts Technologies Inc.

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Overview

Looking for high-quality Zener diodes that offer reliable performance and precise voltage regulation? Look no further than the 1SMA5927BT3G by Onsemi. With a reputable manufacturer like Onsemi, you can trust in the durability and longevity of this product. Ideal for a variety of applications, this Zener diode provides value and benefits to customers by ensuring stable voltage levels and protecting sensitive electronic components. Upgrade your circuits with the 1SMA5927BT3G and experience the advantages of top-notch quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the zener diode, ensuring a longer lifespan.

Working Test Current: 31.2 mA

The high working test current allows for efficient performance of the zener diode in various electrical applications.

Surface Mount: YES

Being surface mountable makes it easier to integrate this zener diode into PCB designs, saving space and enhancing manufacturability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures stability and reliability of the zener diode even under extreme conditions.

Nominal Reference Voltage: 12 V

The specific nominal reference voltage of 12 V makes this zener diode suitable for applications requiring this particular voltage regulation.

Technical Specifications

Zener Diodes 1SMA5927BT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

6.5 ohm

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

31.2 mA

Trade Compliance

1SMA5927BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-647-5859, 5961016475859

NIIN

016475859

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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