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1PMT5929BT1

Onsemi

1PMT5929BT1 by Onsemi

1PMT5929BT1 by Onsemi is a Zener diode with a nominal reference voltage of 15V, max power dissipation of 0.5W, and max operating temperature of 150 °C. It is used for voltage regulation in electronic circuits due to its low dynamic impedance and unidirectional polarity.

Median Price

$0.366

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 8,824 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

USA . 1,955 parts In-Stock

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$0.366

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$0.180

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$0.158

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$0.158

Dan-Mar Components

USA . 1,955 parts In-Stock

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Digiode

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North Shore Components

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AZTECH Wire

Italy . 558 parts In-Stock

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$16.180

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Component Stockers USA

USA . 715 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 7,584 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Corphita

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SupplyDigital Components

Austria . 838 parts In-Stock

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Northwest PG Solutions

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Corohmni

South Africa . 428 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 154 parts In-Stock

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Overview

Elevate your electronics with the 1PMT5929BT1 Zener Diode by Onsemi. Crafted with precision and quality, this efficient component offers unparalleled performance and reliability. Ideal for a wide range of applications, this diode ensures stable voltage regulation in various circuits. Experience the benefits of Onsemi's expertise in semiconductor manufacturing with this small outline, high-performance Zener diode. Trust in the value and advantages that the 1PMT5929BT1 brings to your projects, and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection and durability for the zener diode.

Working Test Current: 25 mA

This zener diode can handle a working test current of 25 mA, making it suitable for a variety of applications.

Surface Mount: YES

Being surface mountable makes this zener diode easy to install and saves space on the circuit board.

Maximum Voltage Tolerance: 5 %

With a maximum voltage tolerance of 5%, this zener diode provides reliable voltage regulation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the zener diode can perform well under various conditions.

Maximum Dynamic Impedance: 9 ohm

The low maximum dynamic impedance of 9 ohm helps in maintaining stable voltage regulation.

Terminal Finish: TIN LEAD

The tin lead finish on the terminals ensures good conductivity and solderability.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this zener diode can handle moderate power levels.

Nominal Reference Voltage: 15 V

The nominal reference voltage of 15 V ensures accurate voltage regulation in the circuit.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of the zener diode ensures consistent voltage regulation in one direction.

Technical Specifications

Zener Diodes 1PMT5929BT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

9 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

15 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

25 mA

Trade Compliance

1PMT5929BT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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