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MMSZ5226BT1G

Onsemi

MMSZ5226BT1G by Onsemi

MMSZ5226BT1G by Onsemi is a Zener diode with 3.3V nominal reference voltage, 5% max voltage tolerance, and 28 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation, such as power supplies and signal conditioning circuits.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

43

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 143 parts In-Stock

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Adafruit Industries

USA . 2,453 parts In-Stock

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Distrelec

Netherlands . 1,402 parts In-Stock

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$0.141

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Mouser Electronics

USA . 24,020 parts In-Stock

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DigiKey

USA . 847 parts In-Stock

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Newark

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Rochester

USA . 64,998 parts In-Stock

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Element14

Singapore . 63,880 parts In-Stock

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UK . 28,840 parts In-Stock

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Verical

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Digiode

USA . 1,051 parts In-Stock

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Freelance Electronics

USA . 2,955 parts In-Stock

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Bristol Electronics

USA . 51,426 parts In-Stock

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TME

Poland . 799 parts In-Stock

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Maritex

Poland . 487 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Component Electronics Inc.

Canada . 2,936 parts In-Stock

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NAC Semi

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Cyclops Electronics Ltd

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Ampacity Inc.

Singapore . 84,234 parts In-Stock

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Corohmni

South Africa . 262 parts In-Stock

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Corphita

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India . 79,439 parts In-Stock

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Component Stockers USA

USA . 228,011 parts In-Stock

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Aztec Data Supply Inc.

USA . 274 parts In-Stock

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Advanced Electronics

New Zealand . 2,453 parts In-Stock

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Continental Prestige Electronics

USA . 75,915 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Argo Parts USA

USA . 1,408 parts In-Stock

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Perfect Parts

USA . 3,288,840 parts In-Stock

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RC Electronics

USA . 123,823 parts In-Stock

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S.R.D Solutions

India . 60,000 parts In-Stock

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Canada . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Israel . 27,010 parts In-Stock

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Brazil . 26,563 parts In-Stock

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Lucentia Tech

USA . 26,563 parts In-Stock

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Authorized Procurement Solutions

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Overview

Unlock the power of precision with the MMSZ5226BT1G Zener Diode by Onsemi. Crafted with top-quality materials and cutting-edge technology, this small outline diode offers unmatched voltage tolerance and dynamic impedance for a wide range of applications. From automotive to industrial electronics, this versatile component ensures reliable performance in any environment. Trust Onsemi's reputation for excellence and choose the MMSZ5226BT1G for your next project. Experience the difference quality makes with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides good insulation and protection for the diode, making it durable and reliable for long-term use.

Working Test Current: 20 mA

The 20 mA working test current allows for stable and efficient operation of the zener diode, ensuring optimal performance in various applications.

Surface Mount: YES

Being surface mountable makes installation easy and convenient, especially in compact electronic devices or densely populated circuit boards.

Maximum Voltage Tolerance: 5 %

The 5% maximum voltage tolerance ensures accurate and precise voltage regulation, making this zener diode ideal for sensitive circuitry.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this zener diode can withstand elevated temperatures, making it suitable for various industrial and automotive applications.

Diode Type: ZENER DIODE

As a zener diode, this product is designed specifically for voltage regulation and protection, providing a stable reference voltage across a wide range of temperatures and currents.

Nominal Reference Voltage: 3.3 V

The 3.3V nominal reference voltage ensures precise voltage regulation, making this zener diode suitable for applications where a consistent voltage level is critical.

Technical Specifications

Zener Diodes MMSZ5226BT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5226BT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-602-8524, 5961016028524

NIIN

016028524

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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