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1N6294AG

Onsemi

1N6294AG by Onsemi

1N6294AG by Onsemi is a Zener technology TRANS VOLTAGE SUPPRESSOR DIODE with a breakdown voltage of 91V. It has a max power dissipation of 5W and clamping voltage of 125V. Ideal for transient suppression in electronic circuits, offering protection against voltage spikes.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

500

-

$0.225

$0.186

$0.166

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 335 parts In-Stock

1+ parts

$0.175

100+ parts

-

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335

$0.175

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Chip Stock

USA . 28,000 parts In-Stock

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28,000

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Vyrian

USA . 11,850 parts In-Stock

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11,850

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,491 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

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1,491

$0.166

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-

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Corohmni

South Africa . 321 parts In-Stock

1+ parts

$0.184

100+ parts

-

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321

$0.184

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AZTECH Wire

Italy . 551 parts In-Stock

1+ parts

$10.780

100+ parts

-

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551

$10.780

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SupplyDigital Components

Austria . 6,613 parts In-Stock

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6,613

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TANS Electronics

Latvia . 6,254 parts In-Stock

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6,254

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Problanco Electronics

Mexico . 5,026 parts In-Stock

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5,026

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Kulean Microsystems

USA . 2,756 parts In-Stock

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2,756

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Native Components

USA . 874 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$4.384

10k+ parts

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874

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$4.384

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UHIMA Technologies

Türkiye . 590 parts In-Stock

1+ parts

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590

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Northwest PG Solutions

USA . 329 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$4.430

10k+ parts

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329

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$4.430

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Overview

Enhance your electronic devices with the 1N6294AG by Onsemi, a top-quality transient suppression device that offers unmatched protection against voltage spikes and surges. Manufactured by Onsemi, a renowned industry leader, this product ensures reliability and durability. Ideal for a wide range of applications, this single-configured device boasts a nominal breakdown voltage of 91V, providing peace of mind for your sensitive equipment. Trust in the value and benefits that the 1N6294AG brings to your projects, safeguarding your investments and enhancing performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and resistant to environmental factors, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high maximum peak power dissipation, this product can effectively handle sudden voltage spikes without getting damaged.

Nominal Breakdown Voltage: 91 V

The nominal breakdown voltage of 91 V ensures effective protection against voltage surges, keeping the connected equipment safe.

Terminal Finish: TIN

The use of TIN terminal finish provides good conductivity and corrosion resistance, ensuring reliable performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The TRANS VOLTAGE SUPPRESSOR DIODE type diode ensures efficient voltage suppression and protection for connected devices.

Technical Specifications

Transient Suppression Devices 1N6294AG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

95.5 V

Minimum Breakdown Voltage:

86.5 V

Nominal Breakdown Voltage:

91 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

125 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

77.8 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6294AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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