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1N6273ARL4G

Onsemi

1N6273ARL4G by Onsemi

1N6273ARL4G by Onsemi is a Zener diode with a breakdown voltage of 12 V and max clamping voltage of 16.7 V, ideal for transient suppression applications. It has a peak power dissipation of 1500 W and is UL recognized, making it suitable for protecting sensitive electronics from voltage spikes in various circuits. The device comes in an axial package with tin finish terminals, providing reliable protection against overvoltage events.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Digiode

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Native Components

USA . 730 parts In-Stock

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Northwest PG Solutions

USA . 977 parts In-Stock

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AZTECH Wire

Italy . 279 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

Türkiye . 773 parts In-Stock

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Overview

Looking for reliable protection against electrical transients? Look no further than the 1N6273ARL4G by Onsemi. As a leader in the industry, Onsemi delivers high-quality transient suppression devices that are perfect for a wide range of applications. With a nominal breakdown voltage of 12V and a maximum non-repetitive peak reverse power dissipation of 1500W, this product offers exceptional value and benefits to customers. Trust Onsemi for top-notch quality and performance in every aspect of your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the device, making it suitable for various environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

The high power dissipation capability of 1500 W allows the device to handle large transient surges or spikes effectively, protecting connected equipment.

Nominal Breakdown Voltage: 12 V

The nominal breakdown voltage of 12 V indicates the point at which the device will start conducting, offering reliable overvoltage protection for connected circuits.

Package Shape: ROUND

The round shape of the package provides ease of installation and integration into various electronic systems.

Maximum Power Dissipation: 5 W

The maximum power dissipation of 5 W ensures efficient heat dissipation, preventing the device from overheating during operation.

Maximum Repetitive Peak Reverse Voltage: 10.2 V

The maximum repetitive peak reverse voltage of 10.2 V allows the device to withstand multiple transient events without degradation, ensuring long-term reliability.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures proper soldering during assembly, securing the device in place for optimal performance.

Diode Element Material: SILICON

The use of silicon diode element material provides high efficiency and reliability in voltage clamping, protecting connected circuits from damage.

Technical Specifications

Transient Suppression Devices 1N6273ARL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

16.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

10.2 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6273ARL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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