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1N6272AG

Onsemi

1N6272AG by Onsemi

1N6272AG by Onsemi is a Zener diode with 11V breakdown voltage and 1500W peak power dissipation. It is a unidirectional transient suppression device in an axial package, ideal for protecting circuits from voltage spikes in electronic applications.

Median Price

$0.330

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 970 parts In-Stock

1+ parts

$1.050

100+ parts

$0.053

1k+ parts

$0.045

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-

970

$1.050

$0.053

$0.045

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Rochester

USA . 1,165 parts In-Stock

1+ parts

-

100+ parts

$0.264

1k+ parts

$0.219

10k+ parts

$0.196

1,165

-

$0.264

$0.219

$0.196

Verical

USA . 1,165 parts In-Stock

1+ parts

-

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-

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$0.330

1,165

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$0.330

Distributors (In-Stock)

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Digiode

USA . 360 parts In-Stock

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$0.206

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360

$0.206

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Chip Stock

USA . 34,000 parts In-Stock

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34,000

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Vyrian

USA . 11,639 parts In-Stock

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11,639

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Distributors (Availability)

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Corphita

USA . 1,928 parts In-Stock

1+ parts

$0.195

100+ parts

-

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1,928

$0.195

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Native Components

USA . 565 parts In-Stock

1+ parts

$0.207

100+ parts

-

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$0.199

565

$0.207

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$0.199

Corohmni

South Africa . 182 parts In-Stock

1+ parts

$0.217

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182

$0.217

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Northwest PG Solutions

USA . 378 parts In-Stock

1+ parts

$0.228

100+ parts

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$0.201

378

$0.228

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$0.201

AZTECH Wire

Italy . 390 parts In-Stock

1+ parts

$17.680

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390

$17.680

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Kulean Microsystems

USA . 7,556 parts In-Stock

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Perfect Parts

USA . 6,026 parts In-Stock

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Problanco Electronics

Mexico . 5,075 parts In-Stock

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SupplyDigital Components

Austria . 3,058 parts In-Stock

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TANS Electronics

Latvia . 2,519 parts In-Stock

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GreenTree Electronics

Israel . 970 parts In-Stock

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970

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Authorized Procurement Solutions

USA . 970 parts In-Stock

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970

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UHIMA Technologies

Türkiye . 487 parts In-Stock

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487

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Overview

Enhance your electronic devices with the 1N6272AG by Onsemi, a top-quality transient suppression device that offers superior protection against voltage spikes. Trusted for its reliability and durability, Onsemi products are known for their innovative technology and exceptional performance. Ideal for a wide range of applications, this diode ensures your equipment stays safe and functional. Invest in the 1N6272AG today and experience peace of mind knowing your devices are safeguarded from potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides durability and protection for the internal components of the transient suppression device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

The high maximum non repetitive peak reverse power dissipation allows the device to handle surges and spikes effectively, making it suitable for protecting sensitive electronics.

Nominal Breakdown Voltage: 11 V

The nominal breakdown voltage of 11 V ensures that the device activates at the specified voltage, providing reliable protection against overvoltage events.

Terminal Finish: TIN

The tin terminal finish offers good conductivity and corrosion resistance, ensuring optimal performance and longevity of the device.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures efficient suppression of voltage spikes and transients, safeguarding connected equipment from damage.

Maximum Clamping Voltage: 15.6 V

The maximum clamping voltage of 15.6 V limits the voltage across the device during a transient event, preventing overvoltage damage to downstream components.

Technical Specifications

Transient Suppression Devices 1N6272AG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

11.6 V

Minimum Breakdown Voltage:

10.5 V

Nominal Breakdown Voltage:

11 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

15.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

9.4 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6272AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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