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PZT3906T/R

NXP Semiconductors

PZT3906T/R by NXP Semiconductors

NXP Semiconductors' PZT3906T/R is a PNP BJT transistor for switching applications. With VCEsat of 0.4V, hFE of 30, and IC of 0.1A, it operates at max temp of 150°C. This surface-mount device in gull wing package has fT of 250MHz and is ideal for small outline designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Digiode

USA . 2,041 parts In-Stock

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Anansix

USA . 1,570 parts In-Stock

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Vyrian

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PC Components Company LLC

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Bristol Electronics

USA . 330 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Electronics Depot

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Aztec Data Supply Inc.

USA . 110 parts In-Stock

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$0.874

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Corohmni

South Africa . 795 parts In-Stock

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Semicontronic

India . 575 parts In-Stock

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$6.050

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AZTECH Wire

Italy . 533 parts In-Stock

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Ampacity Inc.

Singapore . 275 parts In-Stock

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One Stop Electronics

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UNI Independent Distributors

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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Aranea Global

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Metaverse IC Inc.

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Kepictronics

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Technoshack Inc. (Excess)

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Overview

Upgrade your electronic projects with the high-quality PZT3906T/R from NXP Semiconductors. This Small Signal Bipolar Junction Transistor (BJT) offers superior performance in switching applications, with a maximum VCEsat of 0.4V and a minimum DC Current Gain (hFE) of 30. Its compact design, surface mount capability, and maximum operating temperature of 150°C make it ideal for a wide range of applications. Trust NXP Semiconductors for reliable, efficient components that deliver exceptional value and performance to meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Suitable for use in applications that require PNP transistors.

Configuration: SINGLE

Simplified design and operation for ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Easy to mount on circuit boards, saving space and facilitating mass production.

Maximum VCEsat: 0.4 V

Low saturation voltage allows for efficient switching and reduced power consumption.

Package Shape: RECTANGULAR

Standard shape for easy handling and placement on PCBs.

Terminal Form: GULL WING

Facilitates soldering and connection to the circuit.

No. of Terminals: 4

Provides necessary connections for the transistor to function effectively.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Maximum Power Dissipation Ambient: 1.5 W

Can handle moderate power loads without overheating.

Minimum DC Current Gain (hFE): 30

Provides stable amplification of current in various circuits.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance minimizes signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 40 V

Sufficient voltage rating for a wide range of applications.

Transistor Element Material: SILICON

Reliable material for transistor construction, ensuring long-term performance.

Maximum Turn On Time (ton): 65 ns

Fast turn-on time for quick switching operations.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels with ease.

Maximum Turn Off Time (toff): 300 ns

Fast turn-off time for efficient switching and signal processing.

Terminal Finish: TIN

Provides a reliable and corrosion-resistant finish for the terminals.

Terminal Position: DUAL

Facilitates easy connection to the circuit.

Case Connection: COLLECTOR

Standard connection for transistor functionality.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for fast signal processing and switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT3906T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

65 ns

Maximum VCEsat:

.4 V

Trade Compliance

PZT3906T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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