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PUMB11,135

NXP Semiconductors

PUMB11,135 by NXP Semiconductors

PUMB11,135 by NXP Semiconductors is a PNP small signal BJT designed for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 30, and supports up to 0.1 A collector current. Ideal for amplifying signals in compact electronic devices.

Median Price

$0.128

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 221 parts In-Stock

1+ parts

$0.230

100+ parts

$0.093

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$0.051

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$0.032

221

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$0.093

$0.051

$0.032

Arrow

USA . 20,000 parts In-Stock

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Verical

USA . 20,000 parts In-Stock

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Rochester

USA . 20,000 parts In-Stock

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$0.027

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$0.022

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$0.020

20,000

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$0.027

$0.022

$0.020

Distributors (In-Stock)

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Digiode

USA . 309 parts In-Stock

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$0.021

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309

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Chip Stock

USA . 180,000 parts In-Stock

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Vyrian

USA . 2,959 parts In-Stock

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Anansix

USA . 1,261 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 958 parts In-Stock

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$0.020

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958

$0.020

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AZTECH Wire

Italy . 5,394 parts In-Stock

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$0.230

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5,394

$0.230

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Component Stockers USA

USA . 46,732 parts In-Stock

1+ parts

$0.270

100+ parts

$0.080

1k+ parts

$0.050

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$0.020

46,732

$0.270

$0.080

$0.050

$0.020

UNI Independent Distributors

Spain . 7,601 parts In-Stock

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7,601

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 187 parts In-Stock

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Overview

Elevate your designs with the PUMB11,135 from NXP Semiconductors, a trusted leader in innovative technology. This high-quality small signal PNP transistor is engineered for efficiency and reliability, making it ideal for diverse applications like signal amplification and switching. With its robust performance and compact surface mount design, the PUMB11,135 ensures seamless integration into your projects, providing exceptional value and enhanced operational benefits that drive success.

Feature Benefit Bullets

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into various circuit designs, particularly useful for applications requiring common-emitter configurations.

Surface Mount: YES

Surface mount capabilities enable compact designs and automated assembly processes, making it suitable for modern electronics.

No. of Elements: 2

Having two elements enhances the functionality and flexibility, allowing for diverse circuit applications within a single package.

Maximum Power Dissipation (Abs): 0.3 W

A maximum power dissipation of 0.3 W makes this BJT suitable for low-power applications, ensuring efficient operation without overheating.

Minimum DC Current Gain (hFE): 30

A minimum current gain of 30 indicates decent amplification capabilities, suitable for signal amplification in moderate gain applications.

Transistor Element Material: SILICON

Silicon transistors exhibit reliable performance and stability, making them a standard choice for a wide range of electronic applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this BJT is ideal for driving low-power loads while maintaining performance integrity.

Terminal Finish: TIN

The tin terminal finish enhances solderability, ensuring strong and reliable connections during assembly.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand a peak reflow temperature of 260 °C for 30 seconds ensures compatibility with lead-free soldering processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C certifies this component for modern soldering techniques, making it suitable for high-temperature assembly environments.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMB11,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

PUMB11,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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