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PUMB2,115

NXP Semiconductors

PUMB2,115 by NXP Semiconductors

PUMB2,115 by NXP Semiconductors is a PNP BJT transistor with 2 elements and built-in resistor. It is used for switching applications, has a max collector-emitter voltage of 50V, and can handle a max collector current of 0.1A. The package style is small outline, with Gull Wing terminals and a max operating temperature of 150°C.

Median Price

$0.053

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DigiKey

USA . 2,955 parts In-Stock

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$0.190

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$0.073

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$0.047

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$0.032

2,955

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$0.073

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$0.032

Mouser Electronics

USA . 4,039 parts In-Stock

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$0.260

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$0.093

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$0.058

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$0.051

4,039

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$0.051

Newark

USA . 1,979 parts In-Stock

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$0.333

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$0.128

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Farnell

UK . 289,910 parts In-Stock

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Chip1Stop

Japan . 80,350 parts In-Stock

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Rochester

USA . 78,954 parts In-Stock

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$0.053

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Verical

USA . 62,000 parts In-Stock

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EBV Elektronik

Germany . 18,000 parts In-Stock

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Arrow

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Digiode

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Bristol Electronics

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NAC Semi

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Chip Stock

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DigiKey Marketplace

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IBS Electronics

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Vyrian

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Anansix

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LIBRA Elektronik GmbH

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Contempo Components LLC

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Nova Conductors

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NexGen Digital

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Semicontronic

India . 126,660 parts In-Stock

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Ampacity Inc.

Singapore . 103,203 parts In-Stock

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Corphita

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AZTECH Wire

Italy . 9,169 parts In-Stock

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Corohmni

South Africa . 805 parts In-Stock

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Modulus Dynamics

Lithuania . 4,569 parts In-Stock

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Advanced Electronics

New Zealand . 66 parts In-Stock

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Aztec Data Supply Inc.

USA . 300 parts In-Stock

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Formix International (Excess)

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Perfect Parts

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Component Connect

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Continental Prestige Electronics

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Kepictronics

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Glotronic Ltd.

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Eastek

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,857 parts In-Stock

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Argo Parts USA

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Supply Digital

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Lixinc

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UNI Independent Distributors

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Aranea Global

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Overview

Discover the high-quality PUMB2,115 by NXP Semiconductors, a versatile PNP bipolar junction transistor designed for switching applications. With its compact size and built-in resistor, this transistor offers efficiency and reliability in various electronic circuits. Trust in NXP Semiconductors' reputation for excellence in semiconductor manufacturing to deliver a product that exceeds expectations. Enhance your projects with the value and benefits of the PUMB2,115, providing superior performance and precision for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for such purposes.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having built-in resistors simplifies circuit design and saves space on the PCB, making this transistor convenient for use in compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in switching circuits.

Surface Mount: YES

Being surface mountable, this transistor is easy to install and reduces assembly time, making it a convenient choice for mass production.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on a PCB, optimizing space utilization and facilitating proper circuit layout.

No. of Elements: 2

With two elements, this transistor allows for more versatile circuit configurations and applications.

Maximum Power Dissipation (Abs): 0.2 W

The high power dissipation capability of this transistor ensures reliable operation and minimizes the risk of overheating.

Minimum DC Current Gain (hFE): 80

A high DC current gain ensures the transistor amplifies the input signal effectively, making it suitable for various amplification tasks.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand harsh environmental conditions and maintain stable performance.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows this transistor to handle higher voltage levels in the circuit, increasing its versatility and applicability.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making this transistor a dependable choice for various electronic applications.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle relatively high current loads, making it suitable for power-related applications.

Terminal Finish: TIN

The tin terminal finish provides excellent conductivity and solderability, ensuring reliable connections and facilitating the soldering process during assembly.

Terminal Position: DUAL

Having dual terminal positions allows for flexible mounting options and simplifies the connection of external components, enhancing the usability of this transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The short time required at peak reflow temperature simplifies the manufacturing process and reduces the risk of thermal damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

This high peak reflow temperature ensures proper soldering and bonding of the transistor to the PCB, ensuring a reliable connection and long-term performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMB2,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PUMB2,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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