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PUMB20-115

Philips Semiconductors

PUMB20-115 by Philips Semiconductors

PUMB20-115 by Philips Semiconductors is a PNP BJT with 2 elements, 0.3W power dissipation, and 0.1A collector current. Ideal for small signal applications requiring a min hFE of 30. Suitable for surface mount technology in various electronic circuits.

Median Price

$0.049

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Rochester

USA . 129,578 parts In-Stock

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DigiKey

USA . 129,578 parts In-Stock

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Verical

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EBV Elektronik

Germany . 36,000 parts In-Stock

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Chip1Stop

Japan . 11,689 parts In-Stock

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Arrow

USA . 6,000 parts In-Stock

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Digiode

USA . 4,947 parts In-Stock

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Nova Conductors

Japan . 250 parts In-Stock

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TME

Poland . 50 parts In-Stock

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Chip Stock

USA . 96,000 parts In-Stock

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Vyrian

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 61,721 parts In-Stock

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Corphita

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Component Stockers USA

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Argo Parts USA

USA . 8,017 parts In-Stock

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Netroflash

USA . 550 parts In-Stock

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AZTECH Wire

Italy . 5,407 parts In-Stock

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Continental Prestige Electronics

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Perfect Parts

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Glotronic Ltd.

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Eastek

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GreenTree Electronics

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Lixinc

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Authorized Procurement Solutions

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UNI Independent Distributors

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Supply Digital

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Overview

Unlock the power of innovation with the Philips Semiconductors PUMB20-115 Small Signal Bipolar Junction Transistor. Designed for high-performance applications, this PNP transistor offers unparalleled quality and reliability. Whether you're working on audio amplifiers, signal processing circuits, or sensor interfaces, this transistor delivers exceptional performance. Experience the benefits of superior efficiency, durability, and precision with the PUMB20-115 - the perfect choice for your next project.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching applications, offering versatile performance.

Surface Mount: YES

Surface mount technology allows for compact and efficient circuit board design, making it suitable for small electronic devices.

No. of Elements: 2

Having 2 elements in a single package provides flexibility in circuit design and enables more complex electronic applications.

Max Power Dissipation: 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Min DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures consistent and stable amplification performance, crucial for signal processing applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making them a preferred choice for a wide range of electronic circuits.

Max Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, suitable for low-power electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMB20-115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

No. of Elements:

2

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

PUMB20-115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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