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PUMB20-165

Philips Semiconductors

PUMB20-165 by Philips Semiconductors

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 30;

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,282 parts In-Stock

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Anansix

USA . 1,655 parts In-Stock

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Vyrian

USA . 1,421 parts In-Stock

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One Stop Electronics

USA . 1,053 parts In-Stock

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$18.050

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UNI Independent Distributors

Spain . 3,525 parts In-Stock

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Corphita

USA . 1,695 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMB20-165 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

No. of Elements:

2

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

PUMB20-165 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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