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PUMB1,135

NXP Semiconductors

PUMB1,135 by NXP Semiconductors

PUMB1,135 by NXP Semiconductors is a PNP small signal BJT designed for efficient performance in compact applications. It features a max power dissipation of 0.2 W, a min DC current gain (hFE) of 60, and supports surface mount technology. Ideal for low-power amplification and switching tasks in electronic circuits.

Median Price

$0.146

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,486 parts In-Stock

1+ parts

$0.240

100+ parts

$0.090

1k+ parts

$0.058

10k+ parts

$0.032

9,486

$0.240

$0.090

$0.058

$0.032

Mouser Electronics

USA . 349 parts In-Stock

1+ parts

$0.240

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$0.090

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349

$0.240

$0.090

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Rochester

USA . 1,012,000 parts In-Stock

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-

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$0.053

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$0.044

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$0.039

1,012,000

-

$0.053

$0.044

$0.039

Farnell

UK . 810,000 parts In-Stock

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Verical

USA . 720,000 parts In-Stock

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$0.049

720,000

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$0.049

Distributors (In-Stock)

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Digiode

USA . 4,773 parts In-Stock

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$0.021

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4,773

$0.021

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Chip Stock

USA . 147,000 parts In-Stock

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147,000

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Vyrian

USA . 3,981 parts In-Stock

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Anansix

USA . 1,951 parts In-Stock

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1,951

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Distributors (Availability)

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Ampacity Inc.

Singapore . 407,161 parts In-Stock

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$0.019

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Corphita

USA . 2,788 parts In-Stock

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$0.020

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2,788

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AZTECH Wire

Italy . 4,934 parts In-Stock

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$0.240

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4,934

$0.240

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$2.262

100+ parts

$2.058

1k+ parts

$1.855

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5,000

$2.262

$2.058

$1.855

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Continental Prestige Electronics

USA . 810,000 parts In-Stock

1+ parts

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$0.030

810,000

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$0.030

QUARKTWIN TECHNOLOGY LTD

USA . 25,087 parts In-Stock

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Supply Digital

USA . 2,438 parts In-Stock

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2,438

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UNI Independent Distributors

Spain . 504 parts In-Stock

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504

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Overview

Elevate your designs with the PUMB1,135 by NXP Semiconductors—a top-tier PNP transistor that combines exceptional quality and reliability. This surface-mount small signal BJT enhances performance in a variety of applications, from audio amplification to signal processing. With NXP's renowned reputation for innovation and excellence, you can trust the PUMB1,135 to deliver consistent results, energy efficiency, and superior durability for your projects.

Feature Benefit Bullets

Polarity or Channel Type: PNP

The PNP configuration is ideal for applications requiring negative logic, making it suitable for various signal processing tasks.

Surface Mount: YES

Surface mount capability allows for easier bulk assembly and is compatible with high-density circuit board designs.

No. of Elements: 2

With two elements, this BJT can be used in applications requiring complementary configurations, enhancing its versatility.

Maximum Power Dissipation (Abs): 0.2 W

The power dissipation rating enables reliable operation in low to moderate power applications, providing a stable performance.

Minimum DC Current Gain (hFE): 60

A minimum current gain of 60 ensures efficient amplification of weak signals, crucial for signal processing applications.

Transistor Element Material: SILICON

The use of silicon material guarantees good thermal stability and performance, suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 0.1 A

This current rating makes the transistor suitable for medium signal applications without risking damage or performance loss.

Terminal Finish: TIN

The tin terminal finish ensures good solderability and corrosion resistance, leading to improved reliability in circuit assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds allows for compatibility with standard PCB soldering processes, facilitating mass production.

Peak Reflow Temperature °C: 260

Support for high reflow temperatures ensures the component can withstand modern manufacturing processes without compromising integrity.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMB1,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

PUMB1,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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