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PUMB11

Philips Semiconductors

PUMB11 by Philips Semiconductors

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; No. of Elements: 2;

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Chip Stock

USA . 550,728 parts In-Stock

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Tectiva GmbH

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Bristol Electronics

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Atlantic Semiconductor

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ComSIT Distribution GmbH

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Vyrian

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ACDS - Activité Composants Distribution Service

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Modulus Dynamics

Lithuania . 100 parts In-Stock

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AZTECH Wire

Italy . 4,301 parts In-Stock

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One Stop Electronics

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Authorized Procurement Solutions

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Supply Digital

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A-Z Elektronik GmbH

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Corphita

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMB11 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

JESD-609 Code:

e3

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Transistor Element Material:

SILICON

Trade Compliance

PUMB11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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