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PH2369-T/R

NXP Semiconductors

PH2369-T/R by NXP Semiconductors

PH2369-T/R by NXP Semiconductors is a single NPN BJT designed for efficient switching applications. It features a max VCEsat of 0.25V, a min DC current gain (hFE) of 20, and operates up to 150 °C. Its compact cylindrical package ensures versatile integration in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 1,003 parts In-Stock

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Digiode

USA . 890 parts In-Stock

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890

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Vyrian

USA . 651 parts In-Stock

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651

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One Stop Electronics

USA . 220 parts In-Stock

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$28.050

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220

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Corphita

USA . 4,926 parts In-Stock

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UNI Independent Distributors

Spain . 3,326 parts In-Stock

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Overview

Unlock the potential of your designs with the PH2369-T/R from NXP Semiconductors, a trusted name in innovation and quality. This NPN small signal transistor excels in switching applications, delivering reliable performance that enhances efficiency and responsiveness. Housed in a durable cylindrical package, it’s perfect for compact circuits while providing superior temperature resilience up to 150 °C. Choose PH2369-T/R for cutting-edge solutions that power your projects with confidence and dependability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight packaging ensures reliability and ease of integration into various applications.

Polarity or Channel Type: NPN

NPN configuration is widely used in switching applications, making it easy to interface with common circuits.

Configuration: SINGLE

Single transistor design simplifies circuit layout and reduces footprint.

Transistor Application: SWITCHING

Optimized for switching applications, offering fast response times and high efficiency.

Maximum VCEsat: 0.25 V

Low saturation voltage enhances power efficiency and reduces heat generation during operation.

Package Shape: ROUND

Round shape facilitates easy mounting and provides mechanical stability in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections suitable for various PCB designs.

No. of Terminals: 3

Three terminals allow for simple and effective circuit designs, enabling versatile applications.

Package Style (Meter): CYLINDRICAL

Cylindrical packaging is space-efficient and suitable for compact electronic designs.

Minimum DC Current Gain (hFE): 20

Adequate current gain supports reliable amplification in switching applications.

Maximum Operating Temperature: 150 °C

High operating temperature rating ensures performance stability in challenging environments.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance minimizes signal distortion and ensures high-speed performance.

Maximum Collector-Emitter Voltage: 15 V

Moderate voltage rating allows for diverse applications in low to mid-voltage circuits.

Transistor Element Material: SILICON

Silicon material is known for its excellent thermal performance and electrical characteristics.

Maximum Turn On Time (ton): 10 ns

Fast turn-on time is ideal for high-speed switching applications, enhancing overall system performance.

Maximum Collector Current (IC): 0.2 A

Supports moderate collector current handling, suitable for many small to medium power applications.

Maximum Turn Off Time (toff): 20 ns

Quick turn-off time enables efficient operation in pulse-width modulation (PWM) circuits.

Terminal Finish: TIN

Tin finish provides good solderability and corrosion resistance, improving reliability.

Terminal Position: BOTTOM

Bottom terminal positioning allows for effective heat dissipation in compact designs.

Nominal Transition Frequency (fT): 500 MHz

High transition frequency allows for effective operation at high frequencies, suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PH2369-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

20 ns

Maximum Turn On Time (ton):

10 ns

Maximum VCEsat:

.25 V

Trade Compliance

PH2369-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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