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PH2369A-AMMO

NXP Semiconductors

PH2369A-AMMO by NXP Semiconductors

PH2369A-AMMO by NXP is an NPN small signal BJT ideal for switching applications. It features a max VCEsat of 0.5V, operates up to 150 °C, and has a nominal transition frequency of 500MHz. Its cylindrical package ensures efficient thermal management in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,333 parts In-Stock

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Vyrian

USA . 3,287 parts In-Stock

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Anansix

USA . 1,340 parts In-Stock

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One Stop Electronics

USA . 1,538 parts In-Stock

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$32.050

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UNI Independent Distributors

Spain . 6,857 parts In-Stock

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Corphita

USA . 3,443 parts In-Stock

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Overview

Elevate your projects with the PH2369A-AMMO by NXP Semiconductors, a premier choice in small signal BJTs. Crafted from high-quality materials, this NPN transistor ensures reliable switching performance for diverse applications, from consumer electronics to industrial automation. NXP's commitment to innovation guarantees exceptional quality and longevity, giving you peace of mind and enhanced efficiency in every circuit. Unlock your designs' potential with trusted technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching and amplification applications, making this product versatile for electrical designs.

Configuration: SINGLE

A single configuration ensures simplicity and easier integration into circuits, perfect for compact designs.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is ideal for controlling power and signals with high efficiency.

Maximum VCEsat: 0.5 V

A low VCEsat indicates minimal voltage drop across the collector-emitter when the transistor is on, enhancing efficiency in switching applications.

Package Shape: ROUND

The round package shape allows for efficient thermal dissipation and easy mounting in various circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and support for soldering, ensuring reliable performance in a variety of products.

No. of Terminals: 3

Three terminals allow for straightforward connections in common emitter configurations, making it suitable for standard applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style helps in space-efficient assembly and mounting, suitable for compact electronic designs.

Minimum DC Current Gain (hFE): 20

A minimum current gain of 20 ensures adequate amplification, making it a reliable choice for various signal processing applications.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows for use in challenging environments, ensuring longevity and reliability.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance minimizes signal delay and distortion, making it suitable for high-speed applications.

Maximum Collector-Emitter Voltage: 15 V

A maximum collector-emitter voltage of 15 V enables compatibility with a wide range of circuits without risk of breakdown.

Transistor Element Material: SILICON

Silicon material ensures good thermal conductivity and reliability, suitable for high-performance applications.

Maximum Turn On Time (ton): 7 ns

Fast turn-on time of 7 ns allows for rapid switching, making it suitable for high-frequency applications.

Maximum Turn Off Time (toff): 21 ns

Quick turn-off time improves overall switching efficiency, essential for fast signal processing.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates better PCB layout options and ensures effective soldering and heat dissipation.

Nominal Transition Frequency (fT): 500 MHz

A high transition frequency of 500 MHz allows for the use of this transistor in high-frequency applications, enhancing versatility.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PH2369A-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

21 ns

Maximum Turn On Time (ton):

7 ns

Maximum VCEsat:

.5 V

Trade Compliance

PH2369A-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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