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PH2369A-T/R

NXP Semiconductors

PH2369A-T/R by NXP Semiconductors

PH2369A-T/R by NXP Semiconductors is an NPN small signal BJT designed for switching applications. It features a max VCEsat of 0.5V, a min DC current gain (hFE) of 20, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,271 parts In-Stock

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Vyrian

USA . 2,544 parts In-Stock

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2,544

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Anansix

USA . 2,371 parts In-Stock

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One Stop Electronics

USA . 1,441 parts In-Stock

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$1.050

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$1.050

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UNI Independent Distributors

Spain . 3,436 parts In-Stock

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3,436

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Corphita

USA . 2,907 parts In-Stock

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2,907

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Overview

Unlock reliable performance with the PH2369A-T/R from NXP Semiconductors, a leader in innovative electronic solutions. This high-quality NPN small signal transistor excels in switching applications, ensuring efficiency and durability in every operation. With its robust design and exceptional thermal endurance, it easily adapts to diverse environments. Experience enhanced circuit reliability and performance, empowering your projects with unmatched value and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides a lightweight and durable package, ensuring reliable performance in various environments.

Polarity or Channel Type: NPN

An NPN configuration is versatile and commonly used in switching applications, making this transistor ideal for many electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and layout, allowing for easier integration into compact systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT ensures fast and efficient operation in digital and analog circuits.

Maximum VCEsat: 0.5 V

A low VCEsat value minimizes power loss and improves efficiency, making the transistor suitable for battery-operated devices.

Package Shape: ROUND

The round package shape allows for better thermal dissipation and can fit well in various PCB designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals enhance mechanical stability and are easier to solder, making assembly more straightforward.

No. of Terminals: 3

With three terminals, this BJT provides essential functionality while minimizing the space required on the circuit board.

Package Style (Meter): CYLINDRICAL

A cylindrical package allows for efficient space usage and enables a variety of mounting options in electronic designs.

Minimum DC Current Gain (hFE): 20

A minimum hFE of 20 ensures decent amplification, making it suitable for low-power applications while maintaining good signal integrity.

Maximum Operating Temperature: 150 °C

High operating temperature capability supports use in demanding environments and enhances reliability under stress.

Maximum Collector-Base Capacitance: 4 pF

A low capacitance value enables faster switching times, making it appropriate for high-speed applications.

Maximum Collector-Emitter Voltage: 15 V

The voltage rating of 15 V provides versatility across a range of applications, ensuring it can handle common voltage levels.

Transistor Element Material: SILICON

Silicon is the standard material for BJTs, offering well-understood electrical characteristics and reliability.

Maximum Turn On Time (ton): 13 ns

A fast turn-on time ensures quick response in digital circuits, crucial for high-speed switching applications.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this BJT is suitable for low to medium power applications.

Maximum Turn Off Time (toff): 35 ns

A fast turn-off time enhances the overall speed of the circuit, allowing for better performance in high-frequency applications.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for space-saving design in compact electronic layouts.

Nominal Transition Frequency (fT): 500 MHz

A nominal transition frequency of 500 MHz makes this transistor suitable for high-frequency applications, ensuring effective performance in RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PH2369A-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

35 ns

Maximum Turn On Time (ton):

13 ns

Maximum VCEsat:

.5 V

Trade Compliance

PH2369A-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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