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PH2369-AMMO

NXP Semiconductors

PH2369-AMMO by NXP Semiconductors

PH2369-AMMO from NXP Semiconductors is a single NPN BJT designed for efficient switching applications. It features a max VCEsat of 0.25V, operates up to 150 °C, and has a nominal transition frequency of 500MHz. Its compact cylindrical package ensures versatile integration in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,508 parts In-Stock

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4,508

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Anansix

USA . 1,142 parts In-Stock

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Digiode

USA . 586 parts In-Stock

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586

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One Stop Electronics

USA . 301 parts In-Stock

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$26.050

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301

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UNI Independent Distributors

Spain . 5,790 parts In-Stock

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Corphita

USA . 3,363 parts In-Stock

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Overview

Unlock unparalleled performance with the PH2369-AMMO from NXP Semiconductors, a trusted leader in innovative solutions. This high-quality NPN transistor is designed for efficient switching applications, ensuring rapid response times and reliable operation in demanding environments. With its robust construction and exceptional thermal resilience, it offers unmatched reliability and value, empowering your designs to achieve new heights of efficiency and performance. Experience the NXP advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides robustness and protection against environmental factors, ensuring durability in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it allows for efficient switching and amplification in many electronic circuits.

Configuration: SINGLE

The single configuration makes it suitable for simple, cost-effective designs without unnecessary complexity.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT is ideal for fast on/off control in electronic devices.

Maximum VCEsat: 0.25 V

A low saturation voltage allows for greater efficiency in switching applications, reducing power loss.

Package Shape: ROUND

The round package shape helps in various mounting options and provides an effective thermal dissipation.

Terminal Form: THROUGH-HOLE

Through-hole mounting offers improved mechanical stability and is easier for prototyping and soldering.

No. of Terminals: 3

With three terminals, it provides essential functionalities in a compact form, facilitating flexible circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style fits well in various applications and contributes to optimized space utilization.

Minimum DC Current Gain (hFE): 20

A minimum hFE of 20 ensures adequate amplification for operational circuits, making it effective for low signal applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this BJT can function in demanding environments without performance degradation.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance enhances the speed of operation, making it suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

The specified voltage rating allows for safe operation in various circuit designs without risk of breakdown.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties, making this BJT a reliable choice for various electronic applications.

Maximum Turn On Time (ton): 7 ns

Fast turn-on time boosts performance in switching applications, enabling quicker response in circuit designs.

Maximum Turn Off Time (toff): 21 ns

With a quick turn-off time, this transistor ensures efficient operation in high-speed applications.

Terminal Position: BOTTOM

Bottom terminal positioning contributes to ease of soldering and effective thermal management in the circuit.

Nominal Transition Frequency (fT): 500 MHz

A high transition frequency of 500 MHz indicates suitability for high-speed applications, ensuring effective signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PH2369-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

21 ns

Maximum Turn On Time (ton):

7 ns

Maximum VCEsat:

.25 V

Trade Compliance

PH2369-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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