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BLS6G2933S-130,112

NXP Semiconductors

BLS6G2933S-130,112 by NXP Semiconductors

BLS6G2933S-130,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 33 A and operates at temperatures up to 150 °C, making it ideal for power management in various electronic devices. Its surface mount configuration ensures efficient space utilization on PCBs.

Median Price

$534.100

Lifecycle Status

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5

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1k+

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RFMW

USA . 346 parts In-Stock

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Digiode

USA . 1,564 parts In-Stock

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Vyrian

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Flip Electronics

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Anansix

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Northwest PG Solutions

USA . 1,982 parts In-Stock

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Corphita

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Microchip USA

USA . 5,379 parts In-Stock

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Authorized Procurement Solutions

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Native Components

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Overview

Elevate your designs with the BLS6G2933S-130,112 by NXP Semiconductors! With its robust N-channel configuration and superior thermal performance, this power FET is engineered for efficiency and reliability in demanding applications. NXP’s commitment to quality ensures durability and enhanced longevity, making it an ideal choice for automotive, industrial, and consumer electronics. Experience outstanding performance that drives innovation and boosts your project's success!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have better Electron mobility, which results in lower on-resistance and better performance in high-speed applications.

Configuration: SINGLE

A single configuration allows for compact designs and easier integration into various circuits, making it versatile for different applications.

Surface Mount: YES

Surface mount capabilities enhance the ease of assembly in automated manufacturing processes and save space on printed circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhancement mode allows the transistor to remain off until a certain gate voltage is applied, providing better control over power consumption and circuit functionality.

Maximum Drain Current (Abs) (ID): 33 A

With the ability to handle up to 33 A, this product is suitable for high-power applications, ensuring reliability and performance in demanding scenarios.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology enables high scalability and integration, leading to efficient switching and low power consumption, making it ideal for various electronic applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows the FET to be utilized in harsh environments, ensuring stable operation and longevity under extreme conditions.

Maximum Time At Peak Reflow Temperature (s): 30

This specification indicates the transistor's robustness during the soldering process, ensuring that it can withstand typical assembly conditions without damage.

Peak Reflow Temperature °C: 280

The ability to tolerate peak reflow temperatures up to 280 °C ensures compatibility with modern surface mounting technology, enhancing reliability during manufacturing.

Technical Specifications

Power Field Effect Transistors (FET) BLS6G2933S-130,112 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

33 A

Maximum Drain Current (ID):

33 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

280

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BLS6G2933S-130,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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