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BLS6G3135S-20,112

NXP Semiconductors

BLS6G3135S-20,112 by NXP Semiconductors

BLS6G3135S-20,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 2.1 A and operates up to 225 °C, making it ideal for high-temperature applications in electronics. Its surface mount configuration ensures easy integration into compact designs.

Median Price

$155.036

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Rochester

USA . 47 parts In-Stock

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$142.560

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$134.010

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$125.450

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DigiKey

USA . 2,135 parts In-Stock

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Verical

USA . 43 parts In-Stock

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$167.512

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$156.813

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RFMW

USA . 21 parts In-Stock

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Digiode

USA . 1,308 parts In-Stock

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Vyrian

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Anansix

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.375

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$0.341

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$0.308

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$0.375

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Native Components

USA . 321 parts In-Stock

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$0.716

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Northwest PG Solutions

USA . 1,106 parts In-Stock

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$0.787

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Corphita

USA . 1,825 parts In-Stock

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$171.324

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Component Stockers USA

USA . 42 parts In-Stock

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$193.650

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Continental Prestige Electronics

USA . 40 parts In-Stock

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$228.430

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Overview

Elevate your designs with the BLS6G3135S-20,112 by NXP Semiconductors, a premium N-channel Power FET that ensures unparalleled reliability and efficiency. Renowned for their cutting-edge technology, NXP delivers components that excel in demanding applications—from automotive to industrial systems. Experience enhanced performance, superior thermal management, and seamless integration, making this transistor the ideal choice for innovators seeking quality and value in every project.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are known for their high efficiency and better electron mobility, making them suitable for high-speed applications.

Configuration: SINGLE

A single configuration simplifies circuit design and layout, providing compactness and reducing component count.

Surface Mount: YES

Surface mount technology allows for smaller device sizes and improves manufacturability and performance in compact designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance, improving circuit performance and efficiency in signal processing applications.

Maximum Drain Current (Abs) (ID): 2.1 A

With a maximum drain current of 2.1 A, this FET can handle moderate power needs, making it versatile for various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides advantages such as high-speed operation and low power consumption, ideal for modern electronic devices.

Maximum Operating Temperature: 225 °C

A high maximum operating temperature of 225 °C ensures reliability in demanding environments and applications.

Maximum Drain Current (ID): 2.1 A

This specification ensures that the FET can continuously handle substantial current without overheating, making it suitable for power applications.

Technical Specifications

Power Field Effect Transistors (FET) BLS6G3135S-20,112 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2.1 A

Maximum Drain Current (ID):

2.1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BLS6G3135S-20,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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