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BLS6G2731S-130,112

NXP Semiconductors

BLS6G2731S-130,112 by NXP Semiconductors

BLS6G2731S-130,112 by NXP is a single N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 33 A and operates at temperatures up to 200 °C. Ideal for power management in various electronic devices, it features surface mount technology for easy integration.

Median Price

$463.930

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Rochester

USA . 20 parts In-Stock

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$447.220

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$420.390

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$393.550

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DigiKey

USA . 1 parts In-Stock

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$463.930

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Verical

USA . 20 parts In-Stock

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$559.025

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$525.487

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$491.938

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20

$559.025

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$491.938

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Distributors (In-Stock)

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Digiode

USA . 1,436 parts In-Stock

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$493.297

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Chip Stock

USA . 134,000 parts In-Stock

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Vyrian

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Flip Electronics

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Anansix

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Corohmni

South Africa . 158 parts In-Stock

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$1.662

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Corphita

USA . 4,551 parts In-Stock

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$467.334

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Microchip USA

USA . 6,814 parts In-Stock

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$616.886

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Continental Prestige Electronics

USA . 20 parts In-Stock

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$623.130

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QUARKTWIN TECHNOLOGY LTD

USA . 21,084 parts In-Stock

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Authorized Procurement Solutions

USA . 6,800 parts In-Stock

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6,800

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UNI Independent Distributors

Spain . 5,048 parts In-Stock

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Northwest PG Solutions

USA . 2,017 parts In-Stock

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$3.391

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Native Components

USA . 912 parts In-Stock

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$3.356

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$3.356

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Overview

Unlock superior performance with the BLS6G2731S-130,112 by NXP Semiconductors. Renowned for their innovation and reliability, NXP delivers this high-quality N-channel Power FET, ideal for demanding applications like power management and motor control. Enjoy enhanced efficiency, robust thermal performance, and seamless integration in compact designs. Elevate your projects with a trusted solution that guarantees durability and exceptional value!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-state resistance and better efficiency compared to P-channel types, making them ideal for high-speed switching applications.

Configuration: SINGLE

Single configuration allows for simple design and ease of integration into various circuits, making it a versatile choice for many applications.

Surface Mount: YES

Surface mount technology enables compact designs, saving space on PCBs and allowing for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs provide high input impedance and are turned on by a positive gate voltage, which is beneficial for low-power applications.

Maximum Drain Current (Abs) (ID): 33 A

With a maximum drain current of 33 A, this FET can handle significant load requirements, making it suitable for high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology allows for high-speed operation and low power consumption, making this FET well-suited for modern, efficient electronic designs.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature of 200 °C ensures reliability and performance in extreme thermal conditions, extending the operational lifespan of the device.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds ensures compatibility with lead-free soldering processes, which is essential for modern manufacturing standards.

Peak Reflow Temperature °C: 280

A peak reflow temperature of 280 °C allows for effective soldering without damaging the component, ensuring robust assembly quality.

Technical Specifications

Power Field Effect Transistors (FET) BLS6G2731S-130,112 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

33 A

Maximum Drain Current (ID):

33 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

280

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BLS6G2731S-130,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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