Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N-CHANNEL; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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Power Field Effect Transistors (FET) BLF2425M7LS250P,11 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors
Field Effect Transistor Technology:
Operating Mode:
Maximum Operating Temperature:
Polarity or Channel Type:
Sub-Category:
BLF2425M7LS250P,11 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
FT232RL-TUBE
FTDI
FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.
2N2222A
Microchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
Signetics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
SMBJ18CA
Shenzhen Socay Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
TM4C1294NCPDTI3
Texas Instruments
TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
Hy Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM555CMX
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
Yageo
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM317T
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
1552200253
Molex
WIRE AND CABLE;
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
IRFR9024NTRPBF
Infineon Technologies
IRFR9024NTRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 44A and EAS of 62mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in a small outline design.
FDS4559
Fairchild Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .055 ohm;
IRLML2502TRPBF
IRLML2502TRPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 4.2A.
FQD12N20LTM-F085
FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.
NDS355AN-NB9L007A
NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
BUK9M85-60EX
BUK9M85-60EX by Nexperia is a N-channel power FET with 60V DS breakdown voltage and 12.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.085 ohm max on resistance, and 51A pulsed drain current. Suitable for surface mount with Gull Wing terminals in a small outline package style.
FQD12N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Minimum DS Breakdown Voltage: 200 V; Terminal Form: GULL WING;
SQ3427AEEV-T1_GE3
Vishay Intertechnology
Power Field-Effect Transistors;
FDD4243_F085
Fairchild Semiconductor's FDD4243_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 24A Drain Current, and 0.044 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 42W and wide operating temperature range (-55 to 175 °C).
IRFP450PBF
Vishay Intertechnology's IRFP450PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 180W and operates in ENHANCEMENT MODE at up to 150°C.
TN2510N8-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-30 Code: R-PSSO-F3; Maximum Feedback Capacitance (Crss): 25 pF;
SQJ431EP-T1_GE3
Vishay Intertechnology's SQJ431EP-T1_GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, 40A IDM, and 0.221 ohm RDS(ON). Ideal for power applications requiring high drain current and low on-resistance in a small outline package.
BSC190N15NS3GATMA1
Infineon BSC190N15NS3GATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. Features include 200A IDM, 170mJ EAS, and 0.019 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 125W in a small outline package.
G3R450MT17J
Genesic Semiconductor
G3R450MT17J by Genesic Semiconductor is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 12A and EAS of 59mJ. With SILICON CARBIDE material, it operates b/w -55 to 175 °C and has 0.63 ohm Drain-Source Resistance.
IRF5210STRLPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE; Package Shape: RECTANGULAR;
IPB020N10N5ATMA1
Infineon's IPB020N10N5ATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.002 ohm RDS(on), and 120A ID. Ideal for switching applications due to its 480A IDM and built-in diode. Features GULL WING terminals in a SMALL OUTLINE package style.
FQD2N100TM
FQD2N100TM by Onsemi is a N-CHANNEL Power FET with 1000V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 6.4A and EAS of 160mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package style and GULL WING terminals, it offers reliable performance up to 150°C.
IRF7842TRPBF
Infineon's IRF7842TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 140A IDM, 50mJ EAS, and 0.005 ohm RDS(on). Operating from -55 to 150 °C, it has a small outline package with GULL WING terminals for surface mount assembly.
IRLML2502
IRLML2502 by International Rectifier is a N-CHANNEL FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.3W. This MOSFET is surface mountable with GULL WING terminals and can handle up to 33A pulsed drain current.
STH2N120K5-2AG
STMicroelectronics
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 245; Terminal Finish: MATTE TIN;
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BLF278
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (ID): 18 A; Maximum Drain Current (Abs) (ID): 18 A;
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (Abs) (ID): 18 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF246
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 13 A;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain Current (Abs) (ID): 13 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF246B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 8 A;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 200 Cel;
Asi Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain Current (ID): 8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF2425M8LS140U
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
BLF2425M6L180P,118
N-CHANNEL; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
BLF2425M7L250P,118
N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
BLF2425M7LS140,112
N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
BLF2425M7L250P,112
BLF2043,135
N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (Abs) (ID): 2.2 A; Maximum Operating Temperature: 200 Cel; Maximum Drain Current (ID): 2.2 A; No. of Elements: 1;
BLF2425M6LS180P,11
BLF2425M7LS140,118
BLF2425M7L140,112
N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BLF2425M8L140J
N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
BLF2425M8L140U
N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF2043,112
N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (ID): 2.2 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 200 Cel;
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