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2PD601ARW,115

NXP Semiconductors

2PD601ARW,115 by NXP Semiconductors

2PD601ARW,115 by NXP Semiconductors is a NPN BJT transistor with a max collector-emitter voltage of 50V and a min DC current gain of 210. It is designed for switching applications, has a max power dissipation of 0.2W, and operates at temperatures up to 150°C.

Median Price

$0.021

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Rochester

USA . 8,380 parts In-Stock

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$0.027

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Chip1Stop

Japan . 10 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Digiode

USA . 4,999 parts In-Stock

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Chip Stock

USA . 129,000 parts In-Stock

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Vyrian

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Ampacity Inc.

Singapore . 5,200 parts In-Stock

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Continental Prestige Electronics

USA . 1,897 parts In-Stock

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Argo Parts USA

USA . 1,001 parts In-Stock

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Corphita

USA . 863 parts In-Stock

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AZTECH Wire

Italy . 7,004 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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Overview

Discover the NXP Semiconductors 2PD601ARW,115, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a maximum power dissipation of 0.2W and a nominal DC current gain of 210, this NPN transistor offers reliable performance in a compact package. Ideal for a wide range of electronic devices, this transistor provides exceptional value and efficiency. Trust in NXP Semiconductors' reputation for excellence and innovation to deliver the quality and reliability you need for your projects. Upgrade your designs with the 2PD601ARW,115 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, increasing its durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Single configuration transistors are easier to control and integrate into circuits, simplifying the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance in turning on and off circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and reducing costs.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to place and mount the transistor on a PCB, optimizing space usage.

Terminal Form: GULL WING

Gull wing terminals provide reliable and secure connections, ensuring stable performance in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

With a low power dissipation, this transistor operates efficiently without overheating, increasing its lifespan.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 210

High DC current gain ensures signal amplification and stable transistor operation in different circuit conditions.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand harsh environments and perform reliably under varying conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for safe operation in applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and performance, making this transistor a durable choice for various applications.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current applications, this transistor can handle switching operations efficiently.

Terminal Finish: TIN

Tin terminal finish provides good solderability, ensuring secure connections during PCB assembly.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections, offering multiple mounting options for different layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature prevents heat damage to the transistor during soldering, maintaining its performance.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without compromising its functionality.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency indicates good high-frequency performance, suitable for applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PD601ARW,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

210

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2PD601ARW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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