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2PD602AS,115

NXP Semiconductors

2PD602AS,115 by NXP Semiconductors

The NXP Semiconductors 2PD602AS,115 is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V, hFE of 40, and fT of 180MHz. This small outline transistor with Gull Wing terminals operates at up to 150°C and can handle a max collector current of 0.5A.

Median Price

$0.010

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,774,000 parts In-Stock

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3,774,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.010

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500

$0.010

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DigiKey Marketplace

USA . 3,786,000 parts In-Stock

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3,786,000

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Vyrian

USA . 3,773,674 parts In-Stock

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3,773,674

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Digiode

USA . 4,858 parts In-Stock

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4,858

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Anansix

USA . 2,589 parts In-Stock

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2,589

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VNN

France . 624 parts In-Stock

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624

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Distributors (Availability)

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.010

100+ parts

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1k+ parts

$0.009

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1,000

$0.010

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$0.009

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Argo Parts USA

USA . 1,962 parts In-Stock

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$0.010

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$0.009

1,962

$0.010

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$0.009

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.938

100+ parts

$0.854

1k+ parts

$0.769

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270

$0.938

$0.854

$0.769

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Corohmni

South Africa . 13 parts In-Stock

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$1.403

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13

$1.403

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Aztec Data Supply Inc.

USA . 2,512 parts In-Stock

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$1.660

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2,512

$1.660

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Ampacity Inc.

Singapore . 3,773,884 parts In-Stock

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$19.050

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3,773,884

$19.050

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Semicontronic

India . 3,773,834 parts In-Stock

1+ parts

$48.050

100+ parts

$46.849

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$46.608

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3,773,834

$48.050

$46.849

$46.608

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Continental Prestige Electronics

USA . 3,786,000 parts In-Stock

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$0.013

3,786,000

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$0.013

QUARKTWIN TECHNOLOGY LTD

USA . 25,999 parts In-Stock

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Microchip USA

USA . 5,672 parts In-Stock

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Corphita

USA . 4,273 parts In-Stock

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UNI Independent Distributors

Spain . 2,188 parts In-Stock

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2,188

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Overview

Enhance your electronic projects with the 2PD602AS,115 from NXP Semiconductors. This Small Signal Bipolar Junction Transistor offers high-quality performance for switching applications. Its NPN configuration and low VCEsat of 0.6V ensure efficient operation, while the compact gull wing package makes it ideal for surface mount designs. With a maximum collector current of 0.5A and nominal transition frequency of 180 MHz, this transistor delivers reliability and versatility. Trust NXP Semiconductors for top-notch components that elevate your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is lightweight, durable, and cost-effective, making this transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits due to their high performance and efficiency.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easier integration into existing systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can rapidly switch between on and off states with low VCEsat, making it ideal for use in power control circuits.

Surface Mount: YES

The surface mount design allows for easy PCB integration, saving space and reducing assembly time.

Maximum VCEsat: 0.6 V

The low VCEsat value indicates efficient operation with minimal voltage drop across the collector-emitter junction, ensuring high performance in switching applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact footprint, saving space on the PCB.

No. of Terminals: 3

The 3-terminal design simplifies circuit connections and provides flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style further reduces the footprint on the PCB, making this transistor suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures stable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes this transistor suitable for use in demanding environments.

Maximum Collector-Base Capacitance: 15 pF

Low collector-base capacitance minimizes feedback effects in high-frequency circuits, improving stability and performance.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for reliable operation in a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, durability, and reliability, making this product a trusted choice for various electronic applications.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5 A allows for handling moderate power levels in circuits.

Terminal Finish: TIN

The tin terminal finish provides good solderability and ensures reliable electrical connections.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options on the PCB, facilitating circuit layout and design.

Nominal Transition Frequency (fT): 180 MHz

The high nominal transition frequency indicates fast response and high-speed performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PD602AS,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

2PD602AS,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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