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2PD601AQ-TAPE-7

NXP Semiconductors

2PD601AQ-TAPE-7 by NXP Semiconductors

2PD601AQ-TAPE-7 by NXP is an NPN small signal BJT designed for amplifier applications. It features a max VCEsat of 0.5V, hFE of 90, and operates up to 150 °C. This surface-mount transistor is ideal for compact electronic designs requiring efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,695 parts In-Stock

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2,695

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Digiode

USA . 434 parts In-Stock

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434

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Vyrian

USA . 212 parts In-Stock

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212

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Native Components

USA . 688 parts In-Stock

1+ parts

$0.773

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688

$0.773

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Northwest PG Solutions

USA . 1,826 parts In-Stock

1+ parts

$0.850

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1,826

$0.850

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One Stop Electronics

USA . 313 parts In-Stock

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$38.050

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313

$38.050

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UNI Independent Distributors

Spain . 4,484 parts In-Stock

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Corphita

USA . 1,921 parts In-Stock

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Overview

Elevate your designs with the 2PD601AQ-TAPE-7 from NXP Semiconductors, a reliable small signal BJT that delivers exceptional performance for amplifier applications. Boasting robust quality and precision engineering, this NPN transistor ensures superior efficiency and thermal stability, even in challenging environments. Ideal for modern electronics, it empowers your projects with high gain and low saturation voltage, making it the perfect choice for reliability and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy materials offer lightweight and cost-effective options for packaging while providing adequate protection and thermal stability.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications due to their high current gain and versatility.

Configuration: SINGLE

Single configuration is ideal for applications requiring a straightforward design without complex circuit configurations.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, making it suitable for signal amplification in various electronic devices.

Surface Mount: YES

Surface mount capability allows for compact designs and ease of automated assembly, improving manufacturing efficiency.

Maximum VCEsat: 0.5 V

A low VCEsat indicates lower power loss during operation, enhancing efficiency in circuit designs.

Package Shape: RECTANGULAR

Rectangular packages are space-efficient and facilitate easy routing of signals on printed circuit boards (PCBs).

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical stability and ease of soldering, ensuring robust connections.

No. of Terminals: 3

Three terminals simplify the connection in most amplifier configurations, making the design straightforward.

Package Style (Meter): SMALL OUTLINE

Small outline packages save PCB real estate, allowing for more compact design layouts.

Minimum DC Current Gain (hFE): 90

A high minimum DC current gain (hFE) assures effective amplification of weak signals, enhancing overall performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability in demanding environments without compromising performance.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance helps maintain fast switching speeds, making the transistor suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

A maximum voltage rating of 50 V provides ample headroom for handling a variety of applications safely.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material offering good thermal stability and efficient performance characteristics.

Maximum Collector Current (IC): 0.1 A

The specified collector current allows for diverse applications, suitable for driving moderate loads efficiently.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layouts and design configurations, enhancing usability.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz indicates the capability to operate effectively in high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PD601AQ-TAPE-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2PD601AQ-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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