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2PD601AW

Changzhou Galaxy Century Microelectronics

2PD601AW by Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 90; JESD-30 Code: R-PDSO-G3;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PD601AW attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Changzhou Galaxy Century Microelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

2PD601AW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Changzhou Galaxy Century Microelectronics

Galaxy is an IDM semiconductor company focusing on the R&D, manufacture and sales of discrete devices. The main products include all kinds of Diodes, SiC, MOSFETs, Transistors, Analog ICs, Photocouplers, LEDs and other discrete semiconductor devices. We can provide customers with series products and technical solutions with high applicability and reliability to meet their one-stop purchasing needs. Our products are widely used in computers and peripherals, household appliances, adapters and power supplies, network communications, automotive electronics, industrial control and many other fields

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