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2PD601ART,215

NXP Semiconductors

2PD601ART,215 by NXP Semiconductors

2PD601ART,215 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 210. With a package style of small outline and surface mount capability, it is ideal for compact electronic devices requiring high-speed switching capabilities.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 95 parts In-Stock

1+ parts

$0.160

100+ parts

$0.060

1k+ parts

$0.038

10k+ parts

$0.031

95

$0.160

$0.060

$0.038

$0.031

Mouser Electronics

USA . 147 parts In-Stock

1+ parts

$0.180

100+ parts

$0.071

1k+ parts

$0.040

10k+ parts

$0.032

147

$0.180

$0.071

$0.040

$0.032

Newark

USA . 3,959 parts In-Stock

1+ parts

$0.280

100+ parts

$0.110

1k+ parts

$0.072

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-

3,959

$0.280

$0.110

$0.072

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Rochester

USA . 132,990 parts In-Stock

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$0.027

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$0.022

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$0.020

132,990

-

$0.027

$0.022

$0.020

Verical

USA . 111,990 parts In-Stock

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111,990

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RS (Exports)

UK . 4,500 parts In-Stock

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$0.069

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$0.034

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$0.033

4,500

-

$0.069

$0.034

$0.033

Farnell

UK . 4,299 parts In-Stock

1+ parts

-

100+ parts

$0.057

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$0.031

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4,299

-

$0.057

$0.031

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Element14

Singapore . 3,959 parts In-Stock

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$0.114

1k+ parts

$0.075

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3,959

-

$0.114

$0.075

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 753 parts In-Stock

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$0.021

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-

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753

$0.021

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Nova Conductors

Japan . 750 parts In-Stock

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$0.034

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750

$0.034

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Chip Stock

USA . 132,000 parts In-Stock

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132,000

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Sensible Micro Corp

USA . 68,924 parts In-Stock

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VNN

France . 9,781 parts In-Stock

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Vyrian

USA . 6,699 parts In-Stock

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6,699

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Anansix

USA . 2,702 parts In-Stock

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2,702

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Distributors (Availability)

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Ampacity Inc.

Singapore . 81,015 parts In-Stock

1+ parts

$0.019

100+ parts

-

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81,015

$0.019

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Semicontronic

India . 38,279 parts In-Stock

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$0.019

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$0.019

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$0.018

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38,279

$0.019

$0.019

$0.018

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Corphita

USA . 561 parts In-Stock

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$0.020

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561

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Continental Prestige Electronics

USA . 13,279 parts In-Stock

1+ parts

$0.033

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$0.032

13,279

$0.033

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$0.032

Argo Parts USA

USA . 1,244 parts In-Stock

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$0.033

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$0.032

1,244

$0.033

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$0.032

Corohmni

South Africa . 843 parts In-Stock

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$0.034

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843

$0.034

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AZTECH Wire

Italy . 9,296 parts In-Stock

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$0.160

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Aztec Data Supply Inc.

USA . 712 parts In-Stock

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$1.520

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712

$1.520

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Perfect Parts

USA . 161,280 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,758 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Kepictronics

USA . 8,000 parts In-Stock

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UNI Independent Distributors

Spain . 4,876 parts In-Stock

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Lixinc

USA . 3,965 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Supply Digital

USA . 2,942 parts In-Stock

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Netroflash

USA . 2,100 parts In-Stock

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$0.033

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$0.032

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$0.032

2,100

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$0.033

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$0.032

Overview

Discover the power of the 2PD601ART,215 by NXP Semiconductors, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With a maximum power dissipation of 0.25W and a minimum DC current gain of 210, this NPN transistor offers reliability and efficiency like no other. Whether you're looking to enhance your electronics project or streamline your device's performance, this transistor delivers exceptional value and unparalleled benefits. Upgrade your designs with the 2PD601ART,215 and experience next-level functionality today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration in circuits and provides lower ON-state resistance.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in assemblies.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response and high efficiency.

Surface Mount: YES

Surface mount capability makes the transistor easy to attach to PCBs, saving space and improving assembly efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement on circuit boards and enhances thermal performance.

Terminal Form: GULL WING

Gull wing terminals provide better solder joint reliability and ease of soldering during assembly.

No. of Terminals: 3

Three terminals offer simplified circuit connections and easy integration in designs.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, the transistor can handle moderate power levels efficiently.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and facilitates compact designs.

Minimum DC Current Gain (hFE): 210

High minimum DC current gain ensures stable and consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V allows for flexibility in circuit design and applications.

Transistor Element Material: SILICON

Silicon material ensures reliable performance and long-term stability of the transistor.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for handling moderate current loads in circuits.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering during assembly with a maximum time at peak reflow temperature of 30s.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and reliable connections during assembly.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100MHz allows for fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PD601ART,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

210

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2PD601ART,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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