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2N2894A

NXP Semiconductors

2N2894A by NXP Semiconductors

2N2894A by NXP Semiconductors is a PNP RF small signal BJT designed for switching applications. It features a max VCEsat of 0.45V, power dissipation of 1.2W, and operates up to 200 °C. Ideal for high-frequency circuits with a nominal fT of 800 MHz.

Median Price

$1.631

Lifecycle Status

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TEDSS.com

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American Microsemiconductor Inc.

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ICP Electronique

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Sinequanon

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Corel Iberica Componentes, S.L.

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Northwest PG Solutions

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One Stop Electronics

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Component Stockers USA

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UNI Independent Distributors

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Overview

Unlock the potential of your designs with the 2N2894A from NXP Semiconductors—where quality meets innovation. This reliable PNP RF small signal transistor excels in switching applications, providing efficient performance in a compact metal package. With NXP's renowned commitment to excellence, you benefit from enhanced reliability, optimal thermal performance, and versatility across various electronic applications. Elevate your projects with a trusted component that promises durability and exceptional value!

Feature Benefit Bullets

Package Body Material: METAL

The metal package provides enhanced durability and better thermal management, making it suitable for demanding applications.

Polarity or Channel Type: PNP

The PNP configuration is ideal for a variety of switching applications, offering versatility in circuit designs.

Configuration: SINGLE

A single transistor configuration simplifies integration into circuits, allowing for compact designs with fewer components.

Transistor Application: SWITCHING

Designed specifically for switching, this transistor efficiently regulates current flow, making it perfect for control applications.

Maximum VCEsat: 0.45 V

A low VCEsat ensures minimal voltage drop during operation, leading to higher efficiency and lower power loss.

Package Shape: ROUND

The round shape allows for easier handling and placement in automated manufacturing processes.

Terminal Form: WIRE

Wire terminals enable flexible connections in various circuit configurations, catering to diverse integration needs.

No. of Terminals: 3

With three terminals, this BJT is straightforward to connect, allowing for simple circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides stability and ease of mounting in different applications.

Maximum Power Dissipation Ambient: 1.2 W

A power dissipation of 1.2 W allows this transistor to operate effectively in various applications without overheating.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 provides reliable amplification capabilities, making it suitable for low-power circuits.

Maximum Operating Temperature: 200 °C

Operating at up to 200 °C ensures reliability and performance in high-temperature environments.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance minimizes transition losses, allowing for high-speed operations.

Maximum Collector-Emitter Voltage: 12 V

A maximum VCE of 12 V allows for robust performance in various circuit scenarios, providing flexibility in design.

Transistor Element Material: SILICON

Silicon offers excellent electronic properties and reliability, making this BJT suitable for a wide range of applications.

Maximum Turn On Time (ton): 60 ns

A fast turn-on time of 60 ns allows for high-speed switching applications, enhancing the overall performance.

Maximum Collector Current (IC): 0.2 A

Rated for a maximum collector current of 0.2 A, this transistor can handle moderate currents effectively.

Maximum Turn Off Time (toff): 35 ns

A quick turn-off time of 35 ns contributes to efficient switching behavior in high-frequency applications.

Terminal Position: BOTTOM

Bottom terminal positioning enables low-profile designs and better connectivity in tight spaces.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and enhances integration with other components.

Nominal Transition Frequency (fT): 800 MHz

With a nominal transition frequency of 800 MHz, this BJT is well-suited for high-frequency applications, ensuring reliable performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N2894A attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

35 ns

Maximum Turn On Time (ton):

60 ns

Maximum VCEsat:

.45 V

Trade Compliance

2N2894A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-00-001-8578, 5961000018578, 5961-00-126-1641, 5961001261641, 5961-00-415-6836, 5961004156836, 5961-17-052-9867, 5961170529867

NIIN

000018578, 001261641, 004156836, 170529867

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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