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NE5520279A-T1A

Nec Electronics

NE5520279A-T1A by Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Qualification: Not Qualified; Transistor Application: AMPLIFIER;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,000

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,000

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Technical Specifications

RF Power Field Effect Transistors (FET) NE5520279A-T1A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

6 V

Maximum Drain Current (ID):

1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-XQMW-F4

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROWAVE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

QUAD

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE5520279A-T1A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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