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NE85633

Nec Electronics America

NE85633 by Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Bristol Electronics

USA . 8,460 parts In-Stock

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Atlantic Semiconductor

USA . 2,877 parts In-Stock

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QIE Inc.

USA . 85 parts In-Stock

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85

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NAC Semi

USA . 44 parts In-Stock

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ECAB

Sweden . 30 parts In-Stock

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30

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A2Z Electronics, Inc.

USA . 2 parts In-Stock

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Perfect Parts

USA . 56 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 25 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NE85633 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Nec Electronics America

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NE85633 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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