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CM400DU-12H

Mitsubishi Electric

CM400DU-12H by Mitsubishi Electric

Mitsubishi Electric's CM400DU-12H is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, each with built-in diode. It offers 400A IC and 600V VCE for POWER CONTROL applications. With a max power dissipation of 1130W and operating temp up to 150°C, it ensures efficient performance in various industrial settings.

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Vyrian

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680

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ACDS - Activité Composants Distribution Service

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101

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Nova Conductors

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AZTECH Wire

Italy . 680 parts In-Stock

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680

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Microchip USA

USA . 2,478 parts In-Stock

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$210.720

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Experience the power of Mitsubishi Electric with the CM400DU-12H Insulated Gate Bipolar Transistor. Designed for high-performance power control applications, this N-CHANNEL transistor boasts a series connected, center tap configuration with built-in diode elements, delivering exceptional efficiency and reliability. With a maximum collector current of 400 A and a maximum operating temperature of 150°C, this transistor offers unmatched performance and durability. Trust Mitsubishi Electric for cutting-edge technology and superior quality in every application. Upgrade to the CM400DU-12H and elevate your power control capabilities today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them suitable for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for better control of power flow and provides built-in diode protection, enhancing the reliability of the IGBT.

Maximum VCEsat: 3 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, improving energy efficiency of the IGBT.

Maximum Power Dissipation (Abs): 1130 W

With a high power dissipation capacity, this IGBT can handle heavy loads and high power applications with ease.

Maximum Collector-Emitter Voltage: 600 V

The high VCE value allows this IGBT to operate in systems with high voltage requirements, making it versatile for various applications.

Maximum Collector Current (IC): 400 A

With a high collector current rating, this IGBT can handle large current flows, making it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures that this IGBT can withstand elevated temperatures without compromising performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM400DU-12H attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Additional Features:

SUPER FAST RECOVERY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

350 ns

Nominal Turn On Time (ton):

250 ns

Maximum VCEsat:

3 V

Trade Compliance

CM400DU-12H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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