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CM400DU-24NFH

Mitsubishi Electric

CM400DU-24NFH by Mitsubishi Electric

Mitsubishi Electric's CM400DU-24NFH is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, 1200V VCEsat, and 400A IC. Ideal for POWER CONTROL applications due to its 2500W power dissipation, RECTANGULAR package shape, and -40 to +150°C operating temperature range.

Median Price

$196.000

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Forefront Electronics and Design

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Microchip USA

USA . 3,771 parts In-Stock

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Netroflash

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Overview

Elevate your power control game with the CM400DU-24NFH from Mitsubishi Electric. As a leader in Insulated Gate Bipolar Transistors (IGBT), Mitsubishi Electric delivers unparalleled quality and reliability. This N-CHANNEL transistor is perfect for high-power applications, offering a maximum Collector Current of 400 A and a Maximum Collector-Emitter Voltage of 1200 V. With a maximum Power Dissipation of 2500 W, this product is designed to handle even the toughest tasks. Trust Mitsubishi Electric to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speed, making them ideal for power control applications.

Maximum VCEsat: 6.5 V

Low VCEsat means minimal voltage drop across the collector-emitter terminals when conducting, leading to higher efficiency and lower power dissipation.

Maximum Power Dissipation (Abs): 2500 W

With a high maximum power dissipation, this IGBT can handle large amounts of power without overheating, ensuring reliability in power control applications.

Maximum Collector-Emitter Voltage: 1200 V

A high maximum collector-emitter voltage allows this IGBT to be used in high voltage applications, providing versatility in power control designs.

Maximum Gate-Emitter Voltage: 20 V

A lower maximum gate-emitter voltage simplifies the drive circuit requirements and enhances the overall efficiency of the power control system.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM400DU-24NFH attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

6.5 V

Trade Compliance

CM400DU-24NFH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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