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CM200DY-12H

Mitsubishi Electric

CM200DY-12H by Mitsubishi Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Maximum Collector Current (IC): 200 A; Nominal Turn Off Time (toff): 300 ns;

Median Price

$159.250

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 5 parts In-Stock

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$159.250

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Vectronix, Inc

USA . 14 parts In-Stock

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J & M Industries LLC

USA . 8 parts In-Stock

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Tech-Mark Corp

USA . 6 parts In-Stock

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MISTER SPROCKETS

USA . 4 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.940

100+ parts

$1.765

1k+ parts

$1.591

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-

2,000

$1.940

$1.765

$1.591

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Microchip USA

USA . 475 parts In-Stock

1+ parts

$213.394

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475

$213.394

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Alle Elektronik GmbH

Germany . 2,146 parts In-Stock

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RC Electronics

USA . 148 parts In-Stock

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RLX Solution Inc. (Excess)

Canada . 100 parts In-Stock

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100

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Eliminating Global Boundries, Inc

USA . 16 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM200DY-12H attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Additional Features:

SUPER FAST RECOVERY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

300 ns

Nominal Turn On Time (ton):

200 ns

Maximum VCEsat:

2.8 V

Trade Compliance

CM200DY-12H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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