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CM100DU-24F

Mitsubishi Electric

CM100DU-24F by Mitsubishi Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RTC; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 100 A; Qualification: Not Qualified;

Median Price

$122.500

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 5 parts In-Stock

1+ parts

$122.500

100+ parts

-

1k+ parts

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10k+ parts

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5

$122.500

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ACDS - Activité Composants Distribution Service

France . 55 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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55

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Pegasus Components GmbH

Germany . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 677 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

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677

$99.990

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Microchip USA

USA . 3,957 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,957

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM100DU-24F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.4 V

Trade Compliance

CM100DU-24F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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