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PF48F4400P0VBQEE

Micron Technology

PF48F4400P0VBQEE by Micron Technology

Micron Technology's PF48F4400P0VBQEE is a NOR flash memory with 32MX16 organization, 8 sectors of 510 size. Operating b/w -40 to 85 °C, it has a memory density of 536870912 bit and supports common flash interface. Ideal for industrial applications requiring fast access time and low standby current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,358 parts In-Stock

1+ parts

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2,358

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Digiode

USA . 1,946 parts In-Stock

1+ parts

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1,946

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,630 parts In-Stock

1+ parts

$11.000

100+ parts

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1k+ parts

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1,630

$11.000

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AZTECH Wire

Italy . 845 parts In-Stock

1+ parts

$15.015

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845

$15.015

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Continental Prestige Electronics

USA . 3,902 parts In-Stock

1+ parts

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3,902

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Argo Parts USA

USA . 3,546 parts In-Stock

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3,546

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Corphita

USA . 1,097 parts In-Stock

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1,097

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Upgrade your technology with the Micron Technology PF48F4400P0VBQEE Flash Memory, a top-quality product that offers unparalleled performance and reliability. Manufactured by Micron Technology, a leading name in the industry, this flash memory is perfect for a wide range of applications. With its advanced features and innovative design, this product provides exceptional value and benefits to customers, making it a must-have for anyone looking to enhance their electronic devices. Unlock the power of cutting-edge technology with the PF48F4400P0VBQEE Flash Memory from Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the flash memory chip.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration into electronic circuit boards.

Power Supplies (V): 1.8,1.8/3.3

Support for multiple power supply voltages enables compatibility with different systems and applications.

No. of Terminals: 88

A high number of terminals facilitates versatile connections and data transfer capabilities.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance ensures reliable performance in various environmental conditions.

Organization: 32MX16

Efficient organization of memory cells in a 32M x 16 configuration maximizes storage capacity and data access speed.

No. of Sectors/Size: 8, 510

Multiple sectors and varying sector sizes allow for flexible data organization and management.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance for efficient operation.

Maximum Access Time: 100 ns

Fast access time ensures quick data retrieval and processing for improved system performance.

Technical Specifications

Flash Memory PF48F4400P0VBQEE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

100 ns

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B88

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

8, 510

No. of Terminals:

88

No. of Words:

33554432 words

No. of Words Code:

32M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Qualification:

Not Qualified

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00042 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

PF48F4400P0VBQEE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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