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PF48F4400P0VBQEF

Micron Technology

PF48F4400P0VBQEF by Micron Technology

Micron Technology's PF48F4400P0VBQEF is a NOR type Flash Memory with 32MX16 organization, 33554432 words capacity, and 16K/64K sector sizes. It operates at temperatures from -40 to 85 °C and has a memory density of 536870912 bits. Ideal for industrial applications requiring fast access times and low standby current.

Median Price

$5.165

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 809 parts In-Stock

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$5.165

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809

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Vyrian

USA . 3,181 parts In-Stock

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Digiode

USA . 1,414 parts In-Stock

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Bristol Electronics

USA . 1,318 parts In-Stock

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PC Components Company LLC

USA . 1,252 parts In-Stock

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North Shore Components

USA . 1,240 parts In-Stock

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Chip Stock

USA . 1,125 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,010 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Inventory MP

USA . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 221 parts In-Stock

1+ parts

$5.175

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$5.175

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Ampacity Inc.

Singapore . 1,636 parts In-Stock

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$19.000

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Component Stockers USA

USA . 400 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 5,202 parts In-Stock

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Continental Prestige Electronics

USA . 4,090 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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Argo Parts USA

USA . 1,808 parts In-Stock

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Kepictronics

USA . 1,500 parts In-Stock

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Corphita

USA . 53 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 8 parts In-Stock

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Overview

Unlock the power of reliable and high-quality memory storage with Micron Technology's PF48F4400P0VBQEF Flash Memory. Designed with cutting-edge technology and superior craftsmanship, this product offers unparalleled performance and durability. Ideal for a variety of applications, this flash memory provides fast access times and low power consumption, making it a valuable asset for any customer looking to enhance their devices. Trust in Micron Technology to deliver top-notch products that exceed expectations and elevate your user experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory chip, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on PCBs, saving time during production.

Maximum Operating Temperature: 85 °C

Ideal for industrial applications where temperature fluctuations may occur.

Organization: 32MX16

Provides a high memory capacity of 32 megabits organized as 16 bits per word, suitable for storing large amounts of data.

Technology: CMOS

Offers low power consumption and high noise immunity, making the flash memory energy efficient and reliable.

Memory IC Type: FLASH

Flash memory is known for its non-volatile storage capability, making it ideal for storing data even when power is turned off.

Technical Specifications

Flash Memory PF48F4400P0VBQEF attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

100 ns

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

8, 510

No. of Terminals:

88

No. of Words:

33554432 words

No. of Words Code:

32M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00042 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

PF48F4400P0VBQEF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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