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PF48F4400P0VBQEA

Micron Technology

PF48F4400P0VBQEA by Micron Technology

PF48F4400P0VBQEA by Micron Technology is a NOR type flash memory with a capacity of 536870912 bits. It operates at temperatures ranging from -40 to 85°C and has a max access time of 100 ns. It is commonly used in industrial applications that require high-speed data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,415 parts In-Stock

1+ parts

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1,415

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Vyrian

USA . 595 parts In-Stock

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595

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 446 parts In-Stock

1+ parts

$15.056

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446

$15.056

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Continental Prestige Electronics

USA . 6,000 parts In-Stock

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6,000

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Argo Parts USA

USA . 2,620 parts In-Stock

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2,620

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Corphita

USA . 1,940 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Microchip USA

USA . 489 parts In-Stock

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489

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Kepictronics

USA . 157 parts In-Stock

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157

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Overview

Experience the power of reliable and high-performance flash memory with the PF48F4400P0VBQEA by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures top-quality products that deliver exceptional performance and durability. This flash memory is perfect for a wide range of applications, offering fast and efficient data storage solutions. With its advanced technology and versatile design, this product provides customers with unparalleled value, benefits, and advantages. Upgrade your storage capabilities today and enjoy seamless data access and transfer, enhanced reliability, and superior overall performance. Discover the difference with Micron Technology's PF48F4400P0VBQEA!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY. This material provides durability and protection, making the product suitable for various environments and conditions.

Surface Mount

YES. The surface mount feature allows for easy installation and integration, saving time and effort during assembly.

No. of Functions

1. This product offers a single function, but it is highly efficient and capable of addressing diverse memory requirements.

Package Shape

RECTANGULAR. The rectangular shape allows for compact design and efficient use of space, ideal for applications with limited room.

Operating Mode

SYNCHRONOUS. The synchronous operation enables fast data transfer and processing, enhancing overall system performance.

Power Supplies (V)

1.8,1.8/3.3. This flexible power supply range ensures compatibility with a wide range of devices and systems, providing versatility in application.

No. of Terminals

88. The considerable number of terminals enables efficient data transfer and reliable connectivity.

Package Style (Meter)

GRID ARRAY, VERY THIN PROFILE, FINE PITCH. The grid array package style with a very thin profile and fine pitch offers increased density and compactness, suitable for space-constrained applications.

Alternate Memory Width

16. The alternate memory width of 16 provides versatility in addressing different storage requirements efficiently.

Maximum Operating Temperature

85 °C. The high maximum operating temperature ensures reliable performance even in demanding or extreme conditions.

Organization

32MX16. The organized structure of 32 megabytes per 16-bit word allows for efficient data handling and storage management.

Minimum Operating Temperature

40 °C. The low minimum operating temperature guarantees reliable functionality even in harsh cold environments.

No. of Sectors/Size

8, 510. The product offers a choice of 8 or 510 sectors, allowing for flexible storage allocation and efficient data management.

Terminal Position

BOTTOM. The bottom terminal position facilitates easy and convenient installation, ensuring hassle-free integration into systems.

Maximum Seated Height

1 mm. The exceptionally low maximum seated height allows for a compact and sleek design, suitable for space-limited installations.

Width

8 mm. With its narrow width, this product provides a space-saving solution without compromising performance and capacity.

Minimum Supply Voltage (Vsup)

1.7 V. The low minimum supply voltage makes this product energy-efficient and suitable for low-power devices.

Maximum Time At Peak Reflow Temperature (s)

30. The maximum time at peak reflow temperature ensures proper solder melting and joint formation during assembly.

Peak Reflow Temperature °C

260. The high peak reflow temperature guarantees reliable soldering and interconnection with other components.

Type

NOR TYPE. The NOR type flash memory offers fast read and random access capabilities, making it ideal for applications that require quick data retrieval.

Common Flash Interface

YES. Having a common flash interface simplifies integration and programming, enhancing interoperability and ease of use.

Length

11 mm. The compact length allows for efficient space utilization and easy integration into various devices and systems.

Programming Voltage (V)

1.8. The low programming voltage requirement ensures energy efficiency and compatibility with a wide range of systems.

Temperature Grade

INDUSTRIAL. The product's industrial-grade temperature specifications make it suitable for rugged environments and expanded temperature ranges.

Technology

CMOS. This product utilizes CMOS technology, providing low power consumption, high performance, and compatibility with various systems.

Parallel or Serial

PARALLEL. The parallel operation mode allows for fast and efficient data transfer, especially when handling larger volumes of information.

Terminal Form

BALL. The ball terminal form ensures reliable connectivity and makes the product compatible with various soldering technologies.

Sector Size (Words)

16K,64K. The sector size options of 16K or 64K enable efficient storage and retrieval of data in different capacities, offering flexibility to meet various requirements.

Maximum Supply Current

31 mA. The maximum supply current ensures stable and reliable operation while remaining within acceptable power consumption limits.

No. of Words

33554432 words. This product provides a substantial memory capacity of 33554432 words, making it suitable for applications that require extensive data storage.

Memory Width

16. The memory width of 16 bits allows for efficient data processing and manipulation, catering to a wide range of application needs.

Terminal Pitch

0.8 mm. The terminal pitch of 0.8 mm allows for high-density packaging and reliable electrical connections.

No. of Words Code

32M. The 32M word code capacity provides ample space for storing and managing large volumes of data effectively.

Command User Interface

YES. The presence of a command user interface simplifies operation and enhances usability, making it easier to control and manage the product.

Maximum Supply Voltage (Vsup)

2 V. The maximum supply voltage of 2 V ensures compatibility with a variety of power supply sources and systems.

Boot Block

BOTTOM/TOP. This product offers the flexibility of boot block options in both the bottom and top positions, allowing for convenience and ease of integration.

Memory Density

536870912 bit. With a memory density of 536870912 bits, this product offers ample storage capacity for diverse data requirements.

Memory IC Type

FLASH. Being a flash memory IC type, this product allows for efficient data storage, high-speed access, and non-volatile data retention.

Maximum Standby Current

0.00042 Amp. The exceptionally low maximum standby current ensures minimal power consumption during idle periods, contributing to energy efficiency.

Maximum Access Time

100 ns. The quick maximum access time allows for almost instant data retrieval, ensuring swift and efficient operation.

Technical Specifications

Flash Memory PF48F4400P0VBQEA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

100 ns

Additional Features:

ASYNCHRONOUS READ MODE

Alternate Memory Width:

16

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B88

Length:

11 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

8, 510

No. of Terminals:

88

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00042 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

PF48F4400P0VBQEA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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