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JAN1N6466US

Microchip Technology

JAN1N6466US by Microchip Technology

JAN1N6466US by Microchip Tech is a TRANS VOLTAGE SUPPRESSOR DIODE with 30.5V max reverse voltage and 500W peak power dissipation. It's ideal for transient suppression in electronics, conforming to MIL-19500/551C standards. Suitable for surface mount applications due to its ROUND package shape and SINGLE configuration.

Median Price

$18.357

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$18.357

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600

$18.357

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Vyrian

USA . 558 parts In-Stock

1+ parts

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558

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Flip Electronics

USA . 100 parts In-Stock

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100

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NexGen Digital

USA . 16 parts In-Stock

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16

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 660 parts In-Stock

1+ parts

$17.094

100+ parts

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660

$17.094

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RGB Technical Solutions

Ukraine . 599 parts In-Stock

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599

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Overview

Looking for a reliable solution to protect your electronic devices from voltage spikes? Look no further than the JAN1N6466US by Microchip Technology. As a leader in the industry, Microchip ensures top-notch quality and performance. This transient suppression device is perfect for a variety of applications, providing peace of mind against unexpected power surges. Trust in the unmatched value, benefits, and advantages that the JAN1N6466US offers to keep your equipment safe and running smoothly.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to install and replace if necessary.

Surface Mount: YES

Surface mount makes it suitable for compact and densely populated circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High peak reverse power dissipation provides protection against sudden voltage spikes.

Package Shape: ROUND

Round package shape offers compatibility with various mounting options.

No. of Terminals: 2

Having two terminals simplifies the connection process.

Package Style (Meter): LONG FORM

Long form package style allows for easy installation and handling.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and reliability.

Terminal Position: END

End terminal position facilitates connection in circuits.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents interference.

Maximum Power Dissipation: 2.5 W

High power dissipation enables efficient operation and protection.

Reference Standard: MIL-19500/551C

Meets military standard for quality and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode provides effective transient suppression capabilities.

Technology: AVALANCHE

Avalanche technology ensures rapid response and high reliability during transient events.

Terminal Form: WRAP AROUND

Wrap around terminal form offers secure connection and stability.

Maximum Repetitive Peak Reverse Voltage: 30.5 V

Suitable for applications requiring protection against up to 30.5 V peak reverse voltage.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures protection in one direction, ideal for specific circuit requirements.

Diode Element Material: SILICON

Silicon diode element material provides high performance and durability.

Technical Specifications

Transient Suppression Devices JAN1N6466US attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-XELF-R2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Qualified

Reference Standard:

MIL-19500/551C

Maximum Repetitive Peak Reverse Voltage:

30.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

END

Trade Compliance

JAN1N6466US Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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