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JAN1N6467US

Microchip Technology

JAN1N6467US by Microchip Technology

JAN1N6467US by Microchip Tech is a TRANS VOLTAGE SUPPRESSOR DIODE with 40.3V max reverse voltage & 500W peak power dissipation. It's a unidirectional diode in ROUND package for transient suppression applications, meeting MIL-19500/551C standard. Suitable for surface mount config with TIN LEAD finish, ideal for protecting circuits from voltage spikes.

Median Price

$18.357

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 23 parts In-Stock

1+ parts

$18.357

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$18.357

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NexGen Digital

USA . 250 parts In-Stock

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250

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Vyrian

USA . 184 parts In-Stock

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184

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.118

100+ parts

$0.107

1k+ parts

$0.097

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10

$0.118

$0.107

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AZTECH Wire

Italy . 305 parts In-Stock

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$11.942

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Continental Prestige Electronics

USA . 3,919 parts In-Stock

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$18.357

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$17.990

3,919

$18.357

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$17.990

Netroflash

USA . 1,000 parts In-Stock

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$18.357

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$17.990

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1,000

$18.357

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Montano Global Distributors

Canada . 6,327 parts In-Stock

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LOOK Integrated Logistics

Peru . 6,167 parts In-Stock

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LMD Electronica

Estonia . 4,822 parts In-Stock

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NIA Electronics

USA . 2,992 parts In-Stock

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Ledger Components

France . 2,992 parts In-Stock

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Argo Parts USA

USA . 1,004 parts In-Stock

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Overview

Protect your electronics with the JAN1N6467US by Microchip Technology, a top-quality transient suppression device designed to safeguard against voltage spikes and surges. Manufactured by industry leader Microchip Technology, this device offers peace of mind and reliability for a wide range of applications. With its high power dissipation capabilities and advanced technology, the JAN1N6467US provides exceptional protection while maintaining efficiency and performance. Trust Microchip Technology to deliver unparalleled quality and value with this essential component for your electronic systems.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easier to install and replace, simplifying maintenance.

Surface Mount: YES

Surface mount technology allows for easy integration onto circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capability ensures protection against sudden voltage spikes or surges.

Package Shape: ROUND

Round package shape is compact and space-efficient, suitable for various device designs.

No. of Terminals: 2

Having only 2 terminals simplifies connection and reduces chances of error in installation.

Package Style (Meter): LONG FORM

Long form package style provides flexibility in mounting options and aesthetics.

Terminal Finish: TIN LEAD

Tin lead finish ensures good conductivity and solderability, enhancing reliability.

Terminal Position: END

End terminal position makes it easier to connect the device in circuits and reduces interference with other components.

Case Connection: ISOLATED

Isolated case connection helps in preventing cross-talk and interference in circuits.

Maximum Power Dissipation: 2.5 W

Efficient power dissipation allows for continuous protection without overheating.

Reference Standard: MIL-19500/551C

Compliance with military standards ensures high quality and reliability in harsh environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes provide fast response times and effective protection against voltage spikes.

Technology: AVALANCHE

Avalanche technology offers robust performance and high reliability in transient suppression applications.

Terminal Form: WRAP AROUND

Wrap around terminal form provides secure connections and reduces the risk of intermittent contacts.

Maximum Repetitive Peak Reverse Voltage: 40.3 V

Suitable maximum reverse voltage rating for common transient voltage levels encountered in circuits.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures protection against voltage spikes in one direction, while allowing normal current flow.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices JAN1N6467US attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-XELF-R2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Qualified

Reference Standard:

MIL-19500/551C

Maximum Repetitive Peak Reverse Voltage:

40.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

END

Trade Compliance

JAN1N6467US Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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