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JAN1N5631A

New England Semiconductor

JAN1N5631A by New England Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

$43.728

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 199 parts In-Stock

1+ parts

$36.970

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199

$36.970

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Nova Conductors

Japan . 97 parts In-Stock

1+ parts

$50.485

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97

$50.485

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Vyrian

USA . 410 parts In-Stock

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410

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Electronic Expediters

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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AZTECH Wire

Italy . 410 parts In-Stock

1+ parts

$16.114

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410

$16.114

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Continental Prestige Electronics

USA . 5,327 parts In-Stock

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$50.485

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$49.475

5,327

$50.485

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$49.475

Bastille Electronics

Australia . 800 parts In-Stock

1+ parts

$50.490

100+ parts

$47.966

1k+ parts

-

10k+ parts

$44.936

800

$50.490

$47.966

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$44.936

Fulton Briggs Corp.

USA . 7,258 parts In-Stock

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7,258

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Argo Parts USA

USA . 1,492 parts In-Stock

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1,492

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Technical Specifications

Transient Suppression Devices JAN1N5631A attributes and parameters. Explore more Transient Suppression Devices devices from New England Semiconductor

Specs

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-13

JESD-30 Code:

O-MALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500/500

Maximum Repetitive Peak Reverse Voltage:

7.02 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

JAN1N5631A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-030-2189, 5961010302189, 5961-01-192-1841, 5961011921841

NIIN

010302189, 011921841

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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