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JAN1N5631ATR

Microsemi

JAN1N5631ATR by Microsemi

JAN1N5631ATR by Microsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 1500W power dissipation, 7.79-8.61V breakdown voltage range, and -65 to 175°C operating temperature. It is used for transient suppression in applications requiring high power handling and protection against voltage spikes.

Median Price

$47.934

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$47.934

100+ parts

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10

$47.934

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Vyrian

USA . 8,047 parts In-Stock

1+ parts

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8,047

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,264 parts In-Stock

1+ parts

$1.010

100+ parts

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1,264

$1.010

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AZTECH Wire

Italy . 812 parts In-Stock

1+ parts

$16.964

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812

$16.964

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Continental Prestige Electronics

USA . 6,918 parts In-Stock

1+ parts

$44.578

100+ parts

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10k+ parts

$43.687

6,918

$44.578

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$43.687

Component Stockers USA

USA . 58 parts In-Stock

1+ parts

$727.090

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58

$727.090

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$46.975

1k+ parts

$45.537

10k+ parts

$44.579

2,000

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$46.975

$45.537

$44.579

Argo Parts USA

USA . 1,592 parts In-Stock

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1,592

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Overview

Enhance your electronic systems with the JAN1N5631ATR by Microsemi, a top-tier manufacturer known for its quality and reliability. As a Transient Suppression Device, this product offers unparalleled protection against voltage spikes, ensuring the longevity of your equipment. With a maximum power dissipation of 1500 W and a wide operating temperature range, this diode is versatile and durable. Whether you are in the automotive, industrial, or telecommunications industry, the JAN1N5631ATR provides the peace of mind and performance you need. Trust in Microsemi for cutting-edge technology that delivers exceptional value and peace of mind.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent thermal conductivity, ensuring efficient heat dissipation and increasing the durability of the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability allows the device to handle sudden surges or spikes in voltage effectively, preventing damage to connected equipment.

Maximum Operating Temperature: 175 °C

Wide operating temperature range enables the device to function reliably in various environmental conditions, making it suitable for a range of applications.

Minimum Breakdown Voltage: 7.79 V

Low breakdown voltage ensures that the device triggers quickly in response to overvoltage conditions, providing immediate protection to the connected circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Transistor voltage suppressor diode design ensures efficient suppression of voltage spikes and transients, safeguarding connected equipment from potential damage.

Technical Specifications

Transient Suppression Devices JAN1N5631ATR attributes and parameters. Explore more Transient Suppression Devices devices from Microsemi

Specs

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-202AA

JESD-30 Code:

O-MALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500

Maximum Repetitive Peak Reverse Voltage:

7.02 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JAN1N5631ATR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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