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JAN1N5635A

Microchip Technology

JAN1N5635A by Microchip Technology

JAN1N5635A by Microchip Tech is a TRANS VOLTAGE SUPPRESSOR DIODE with 1500W power dissipation, 11.4-12.6V breakdown voltage, and UNIDIRECTIONAL polarity. It's used for transient suppression in MIL-19500 applications requiring AVALANCHE technology and SILICON diode material.

Median Price

$51.468

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Nova Conductors

Japan . 10 parts In-Stock

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$50.485

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American Microsemiconductor Inc.

USA . 14 parts In-Stock

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$52.450

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Electronic Expediters

USA . 1,027 parts In-Stock

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Vyrian

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Manoshevitz Elec. Sales

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Electronics Depot

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Resion

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AZTECH Wire

Italy . 402 parts In-Stock

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$18.430

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LOOK Integrated Logistics

Peru . 7,897 parts In-Stock

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Metaverse IC Inc.

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LMD Electronica

Estonia . 4,686 parts In-Stock

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Montano Global Distributors

Canada . 2,526 parts In-Stock

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NIA Electronics

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Ledger Components

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Netroflash

USA . 1,000 parts In-Stock

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$49.475

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$47.961

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$46.951

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Overview

Experience unparalleled protection and reliability with the JAN1N5635A transient suppression device by Microchip Technology. Designed with cutting-edge technology and top-quality materials, this product offers maximum power dissipation of 1500 W and a minimum breakdown voltage of 11.4 V. Ideal for various applications in automotive, industrial, and telecommunications industries, this diode ensures superior performance and long-lasting durability. Trust Microchip Technology to deliver exceptional value and peace of mind with the JAN1N5635A.

Feature Benefit Bullets

Package Body Material: METAL

This product's sturdy metal body makes it durable and reliable for long-term use.

Config: SINGLE

The single configuration simplifies installation and maintenance of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, this device can effectively handle surges and protect connected equipment.

Package Shape: ROUND

The round shape allows for easy mounting and placement in various setups.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring process and reduces chances of errors.

Package Style (Meter): LONG FORM

The long form package provides added protection and ensures proper insulation.

Terminal Finish: TIN LEAD

The tin lead finish enhances conductivity and ensures a secure connection.

Terminal Position: AXIAL

The axial terminal position allows for easy alignment during installation.

Case Connection: CATHODE

The cathode case connection enhances the device's effectiveness in suppressing transient voltage spikes.

Maximum Power Dissipation: 1 W

This low power dissipation ensures efficiency and prevents overheating of the device.

Minimum Breakdown Voltage: 11.4 V

A minimum breakdown voltage of 11.4 V provides reliable protection against voltage spikes below this threshold.

Maximum Breakdown Voltage: 12.6 V

The maximum breakdown voltage of 12.6 V ensures protection against higher voltage surges without compromising device integrity.

Reference Standard: MIL-19500

Compliance with MIL-19500 standards ensures quality and reliability in various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode design enhances the device's performance in suppressing transient voltage spikes.

Technology: AVALANCHE

The avalanche technology allows for efficient handling of high-energy surges without compromising device integrity.

Terminal Form: WIRE

The wire terminal form provides flexibility and ease of connection during installation.

Maximum Repetitive Peak Reverse Voltage: 10.2 V

This device can handle repetitive peak reverse voltages up to 10.2 V, providing consistent protection against voltage spikes.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only conducts in one direction, enhancing its efficiency in suppressing voltage spikes.

Diode Element Material: SILICON

The silicon diode element material ensures durability and reliability in various operating conditions.

Technical Specifications

Transient Suppression Devices JAN1N5635A attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-202AA

JESD-30 Code:

O-MALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Qualified

Reference Standard:

MIL-19500

Maximum Repetitive Peak Reverse Voltage:

10.2 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JAN1N5635A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-077-2018, 5961010772018, 5961-01-110-8926, 5961011108926

NIIN

010772018, 011108926

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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