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JAN1N5663ATR

Microsemi

JAN1N5663ATR by Microsemi

JAN1N5663ATR by Microsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 145V VRWM, 1500W Pd, and -65 to 175°C operating temp. Ideal for transient suppression in military applications meeting MIL-19500 standards.

Median Price

$55.579

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 40 parts In-Stock

1+ parts

$55.579

100+ parts

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1k+ parts

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40

$55.579

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Vyrian

USA . 7,831 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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7,831

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,602 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

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10k+ parts

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1,602

$0.010

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AZTECH Wire

Italy . 618 parts In-Stock

1+ parts

$14.893

100+ parts

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618

$14.893

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$54.467

100+ parts

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1k+ parts

$52.289

10k+ parts

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2,000

$54.467

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$52.289

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Overview

Discover the reliable and high-quality JAN1N5663ATR by Microsemi, a leading manufacturer in the industry. This transient suppression device offers unparalleled protection against voltage spikes, making it ideal for a wide range of applications. From industrial equipment to consumer electronics, this product ensures optimal performance and peace of mind for customers. Trust in the value, benefits, and advantages that Microsemi brings with each component, setting the standard for excellence in the market. Choose Microsemi for superior quality and innovation in every device.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides excellent heat dissipation, helping to ensure the device can handle high power levels effectively.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation rating, this device can effectively protect against power surges and transient events without risking damage to the device itself.

Maximum Operating Temperature: 175 °C

The high operating temperature range allows the device to be used in a variety of environments without sacrificing performance or reliability.

Minimum Breakdown Voltage: 162 V

The high minimum breakdown voltage ensures that the device can effectively clamp and suppress transient events to protect sensitive electronics.

Reference Standard: MIL-19500

Being compliant with military standards ensures a high level of quality and reliability, making this device suitable for critical applications where performance is essential.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode allows for efficient and effective transient suppression, ensuring that connected devices are protected from voltage spikes and surges.

Technical Specifications

Transient Suppression Devices JAN1N5663ATR attributes and parameters. Explore more Transient Suppression Devices devices from Microsemi

Specs

Maximum Breakdown Voltage:

179 V

Minimum Breakdown Voltage:

162 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-202AA

JESD-30 Code:

O-MALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500

Maximum Repetitive Peak Reverse Voltage:

145 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JAN1N5663ATR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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