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JAN1N6466

Microchip Technology

JAN1N6466 by Microchip Technology

JAN1N6466 by Microchip Tech is a TRANS VOLTAGE SUPPRESSOR DIODE with 30.5V max reverse voltage & 500W peak power dissipation. It's used for transient suppression in electronics, offering UNIDIRECTIONAL protection against voltage spikes. With AVALANCHE tech, it ensures reliable performance in temp range of -55 to 175 °C.

Median Price

$11.580

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 490 parts In-Stock

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$11.580

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Nova Conductors

Japan . 10 parts In-Stock

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$14.488

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American Microsemiconductor Inc.

USA . 2 parts In-Stock

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$72.200

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Flip Electronics

USA . 230 parts In-Stock

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Vyrian

USA . 142 parts In-Stock

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Beltway Electronics Company

USA . 10 parts In-Stock

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LWI Electronics Inc

India . 2 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 278 parts In-Stock

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$11.952

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Netroflash

USA . 1,000 parts In-Stock

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$14.488

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$14.198

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Marpe Global Electronics

Taiwan . 115 parts In-Stock

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QualityLine Systems

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XL Components Corporation

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Overview

Looking for reliable transient suppression devices? Look no further than the JAN1N6466 by Microchip Technology. With a reputation for quality and innovation, Microchip Technology delivers top-notch products that exceed industry standards. Whether you're in need of protection for sensitive electronics or looking to prevent voltage spikes, this diode offers superior performance and peace of mind. Trust Microchip Technology to provide you with the best solutions for your application needs.

Feature Benefit Bullets

Config: SINGLE

Single configuration ensures easy installation and maintenance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capacity provides protection against sudden voltage spikes or surges.

Package Shape: ROUND

Round package shape allows for easy handling and installation in various devices.

No. of Terminals: 2

Simple 2-terminal design for straightforward connectivity.

Package Style (Meter): LONG FORM

Long form package style offers enhanced durability and robustness.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures reliability in different environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and corrosion resistance.

Terminal Position: AXIAL

Axial terminal position for easy connection in circuit boards.

Case Connection: ISOLATED

Isolated case connection for safety and protection against electric shocks.

Maximum Power Dissipation: 2.5 W

Efficient power dissipation to handle transient voltage spikes effectively.

Reference Standard: MIL-19500/551C

Compliance with industry standards ensures quality and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode for effective transient suppression and protection.

Technology: AVALANCHE

Avalanche technology for high energy absorption capability.

Terminal Form: WIRE

Wire terminal form for easy connectivity and durability.

Maximum Repetitive Peak Reverse Voltage: 30.5 V

Repetitive peak reverse voltage rating for consistent protection against voltage surges.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures protection in one direction, ideal for specific applications.

Diode Element Material: SILICON

Silicon diode element material for efficient voltage suppression and durability.

Technical Specifications

Transient Suppression Devices JAN1N6466 attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Qualified

Reference Standard:

MIL-19500/551C

Maximum Repetitive Peak Reverse Voltage:

30.5 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JAN1N6466 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-270-3570, 5961012703570

NIIN

012703570

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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