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JAN1N6471US

Microchip Technology

JAN1N6471US by Microchip Technology

JAN1N6471US by Microchip Technology is a Transient Suppression Device with a max power dissipation of 3W. It has a min breakdown voltage of 13.6V and is designed as a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE. This device is commonly used for surge protection in various electronic applications.

Median Price

$20.242

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$20.242

100+ parts

-

1k+ parts

-

10k+ parts

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10

$20.242

-

-

-

Vyrian

USA . 529 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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529

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,506 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

-

10k+ parts

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1,506

$2.010

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-

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AZTECH Wire

Italy . 529 parts In-Stock

1+ parts

$11.533

100+ parts

-

1k+ parts

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10k+ parts

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529

$11.533

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$19.837

100+ parts

-

1k+ parts

$19.044

10k+ parts

-

1,000

$19.837

-

$19.044

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Continental Prestige Electronics

USA . 4,072 parts In-Stock

1+ parts

$20.242

100+ parts

-

1k+ parts

-

10k+ parts

$19.837

4,072

$20.242

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-

$19.837

Component Stockers USA

USA . 265 parts In-Stock

1+ parts

$198.580

100+ parts

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1k+ parts

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10k+ parts

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265

$198.580

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QualityLine Systems

Poland . 7,159 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,159

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Marpe Global Electronics

Taiwan . 4,891 parts In-Stock

1+ parts

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4,891

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Argo Parts USA

USA . 2,281 parts In-Stock

1+ parts

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100+ parts

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2,281

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XL Components Corporation

Australia . 1,262 parts In-Stock

1+ parts

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1,262

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Overview

Discover the JAN1N6471US by Microchip Technology, a top-of-the-line Transient Suppression Device that guarantees exceptional quality and reliability. As a trusted manufacturer in the industry, Microchip Technology delivers cutting-edge solutions for various applications. With its robust design and surface mount capability, this product offers unbeatable protection against voltage surges. Its high power dissipation and breakdown voltage ensure optimal performance and durability. Whether you need to safeguard your sensitive electronics or enhance the efficiency of your circuitry, the JAN1N6471US is the perfect choice. Experience peace of mind and uninterrupted operation with this exceptional product from Microchip Technology.

Feature Benefit Bullets

Package Body Material: GLASS

Glass is a durable and heat-resistant material, ensuring the product can withstand high temperatures and provide reliable protection.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability ensures the device can handle sudden voltage spikes without getting damaged.

Minimum Breakdown Voltage: 13.6 V

With a high breakdown voltage, the device can effectively suppress transients and protect sensitive electronics from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, offering reliable protection against voltage spikes and surges.

Technology: AVALANCHE

Avalanche technology ensures quick response to transient events, providing rapid protection for connected devices.

Technical Specifications

Transient Suppression Devices JAN1N6471US attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Minimum Breakdown Voltage:

13.6 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Qualified

Reference Standard:

MIL-19500/552C

Maximum Repetitive Peak Reverse Voltage:

12 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

END

Trade Compliance

JAN1N6471US Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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